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Chinese National Standard Category: Semimetal and semiconductor material in general

English Title: Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Chinese Title: 用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法
Standard No.: GB/T 14863-2013
Category No.: H80
Issued by: AQSIQ,SAC
Issued on: 2013-12-31
Implemented on: 2014-8-15
Status: abolished
Superseded by:
Superseded on:
Abolished on:2017-12-19
Superseding:GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes
Word Count:7000 words
Similar Standards: GB/T 37051-2018   GB/T 29507-2013   GB/T 29057-2023   GB/T 16596-2019   GB/T 16595-2019   GB/T 14844-2018   GB/T 8756-2018   GB/T 34479-2017   GB/T 32279-2015   YS/T 985-2014   GB/T 30453-2013   GB/T 14863-2013   GB/T 30110-2013   GB/T 29505-2013   GB/T 29057-2012   YS/T 838-2012   GB/T 26069-2010   GB/T 26071-2010   GB/T 26068-2010   GB/T 14847-2010  
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