Test method for measuring resistivity of monocrystal silicon GB/T 1551-2009 - Chinese Category:GB/T 1551-2009

English Title:	Test method for measuring resistivity of monocrystal silicon
Chinese Title:	硅单晶电阻率测定方法
Standard No.:	GB/T 1551-2009
Category No.:	H80
Issued by:	AQSIQ; SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	superseded
Superseded by:	GB/T 1551-2021 Test method for measuring resistivity of monocrystal silicon—In-line four-point probe and direct current two-point probe method
Superseded on:	2021-12-1
Abolished on:
Superseding:	GB/T 1552-1995 Test method for measuring resistivity of monocrystal silicon and germanium with a collinear four-probe array GB/T 1551-1995 Test method for resistivity of silicon and germanium bars using a two-point probe
Word Count:	12000 words
Similar Standards:	GB/T 37051-2018 GB/T 29507-2013 GB/T 29057-2023 GB/T 16596-2019 GB/T 16595-2019 GB/T 14844-2018 GB/T 8756-2018 GB/T 34479-2017 GB/T 32279-2015 YS/T 985-2014 GB/T 30453-2013 GB/T 14863-2013 GB/T 30110-2013 GB/T 29505-2013 GB/T 29057-2012 YS/T 838-2012 GB/T 26069-2010 GB/T 26071-2010 GB/T 26068-2010 GB/T 14847-2010

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