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Chinese National Standard Category: Semiconductor triode

English Title: devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification
Chinese Title: 半导体器件 分立器件 第7部分:双极型晶体管 第四篇 高频放大管壳额定双极型晶体管空白详细规范
Standard No.: GB/T 7576-1998
Category No.: L42
Issued by: AQSIQ
Issued on: 1998-1-1
Implemented on: 1999-6-1
Status: valid
Superseded by:
Superseded on:
Abolished on:
Superseding:GB/T 7576-1987 Blank detail specification for case-rated bipolar transistors for high-frequency amplification
GB 7576-1987 Blank detail specification for case -rated bipolar transistors for high--frequncy amplification (Applicable for certification)
Word Count:7000 words
Similar Standards: GB/T 11590-1989   GB 10272-1988   GB 10279-1988   GB 10271-1988   GB 9517-1988   GB/T 29332-2012   SJ 50033/170-2007   SJ 50033/172-2007   SJ 50033/176-2007   SJ 50033/166-2004   SJ 50033/168-2004   SJ 50033/167-2004   SJ 50033/169-2004   SJ 50033/163-2003   SJ/T 11227-2000   SJ/T 11226-2000   SJ/T 11225-2000   GB/T 6219-1998   GB/T 6217-1998   GB/T 7576-1998  
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