Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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SJ/T 10229-1991 Graphic instrument for characteristics of semiconductor tubes for Type XJ4810 375.0 via email in 1~3 business day valid
SJ 50033/162-2003 Semiconductor discrete device Detail specification of type 2CW1022 for silicon bidirectional voltage regulator diodes 150.0 via email in 1~3 business day valid
GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above 150.0 via email in 1~3 business day abolished
GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes 490.0 via email in 1~3 business day abolished
GB/T 6589-2002 Semiconductor Devices—Discrete deveice—Part 3-2:Signal (including switching) and regulator diodes—Blank detail specification for voltage-regulator diodes and voltage-reference diodes (e 170.0 via email in 1~3 business day valid
SJ 20972-2007 General specification for imaging charge coupled assemblies 150.0 via email in 1~3 business day valid
GB/T 6351-1998 Semiconductor devices--Discrete devices Part 2:Rectifier diodes Section One--Blank detail specification for rectifier diodes(including avalanche recti-fier diodes),ambient and case-rate 140.0 via email in 1~3 business day valid
SJ/T 11152-1998 Blank detail specification for a.c. powder electro luminescent display devices 105.0 via email in 1~3 business day valid
GB/T 6588-2000 Semiconductor devices--Discrete devices--Part 3:Signal(including switching)and regulator diodes--Section One--Blank detail specification for signal diodes,switching diodes and controlle 150.0 via email in 1~3 business day valid
GB/T 4589.1-1989 Semiconductor devices Generic specification for discrete devices and integrated circuits 770.0 via email in business day abolished
SJ 50033/164-2003 Semiconductor discrete devices Detail specification for type PIN0002 PIN diode 135.0 via email in 1~3 business day valid
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 165.0 via email in 1~3 business day valid
GB/T 4937.4-2012 Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST) 110.0 via email in 1~3 business day valid
GB/T 32817-2016 Semiconductor devices - Micro-electromechanical devices - Generic specification for MEMS 320.0 via email in 1~5 business day valid
GB/T 21420-2008 General requirements for light-trigged thyristors for HVDC transmission 135.0 via email in 1~3 business day valid
GB/T 4589.1-2006 Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits 435.0 via email in 1~3 business day valid
SJ 20957-2006 General specification for large power semiconductor laser diode array 300.0 via email in 1~5 business day valid
GB/T 4937-1995 Mechanical and climatic test methods for semiconductor devices 480.0 via email in 1~5 business day abolished
GB/T 4586-1994 Semiconductor devices-Discrete devices-Part 8: Field-effect transistors 500.0 via email in 1~3 business day valid
GB/T 15292-1994 Measuring methods for thyristor Reverse conducting triode thyristor 60.0 via email in 1~3 business day abolished
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