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Chinese National Standard List: Semiconductor discrete devices in general

Title Standard No. Implemented On
Semiconductor devices—Mechanical and climatic test methods—Part 17:Neutron irradiationGB/T 4937.17-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 30:Preconditioning of non-hermetic surface mount devices prior to reliability testingGB/T 4937.30-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 14:Robustness of terminations(lead integrity）GB/T 4937.14-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 15:Resistance to soldering temperature for through-hole mounted devicesGB/T 4937.15-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 13:Salt atmosphereGB/T 4937.13-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 19:Die shear strengthGB/T 4937.19-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heatGB/T 4937.20-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 21: SolderabilityGB/T 4937.21-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 18:Ionizing radiation(total dose)GB/T 4937.18-20182019-1-1
Semiconductor devices - Mechanical and climatic test methods - Part 12: Vibration, variable frequencyGB/T 4937.12-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 11:Rapid change of temperature—Two-fluid-bath methodGB/T 4937.11-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 22:Bond strengthGB/T 4937.22-20182019-1-1
Semiconductor devices—Mechanical and climatic test methods—Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heatGB/T 4937.201-20182019-1-1
The rule of type designation for discrete semiconductor devicesGB/T 249-20172017-12-1
Junction-to-case thermal resistance transient test method of semiconductor devicesDB52/T 1104-20162016-10-1
Information security technology—Trusted computing specification—Motherboard function and interface of trusted platformGB/T 29827-20132014-2-1
Information technology—Security techniques—Message Authentication Codes (MACs)—Part 2:Mechanisms using a dedicated hash-functionGB/T 15852.2-20122013-6-1
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)GB/T 4937.4-20122013-2-15
Semiconductor devices - Mechanical and climatic tests methods - Part 3: External visual examinationGB/T 4937.3-20122013-2-15
Liquid crystal display devices - Part 1-1: Terminology and symbolsGB/T 18910.11-20122013-2-15
Liquid crystal display devices - Part 4-1: Matrix colour LCD modules - Essential ratings and characteristicsGB/T 18910.41-20082008-11-1
Liquid crystal display devices—Part 2-2: Matrix colour LCD modules—Blank detail specificationGB/T 18910.22-20082008-11-1
Semiconductor devices-Part 16-1:Microwave integrated circuits-AmplifiersGB/T 20870.1-20072007-9-1
Semconductor devices Part 14-1: Semiconductor sensors - General and classificationGB/T 20521-20062007-2-1
Semiconductor devices Part 14-3: Semiconductor sensors - Pressure sensorsGB/T 20522-20062007-2-1
Semiconductor devices - Discrete devices - Part 4: Microwave devices GB/T 20516-20062007-2-1
Semiconductor devices - Mechanical and climatic test methods - Part 2 : Low air pressureGB/T 4937.2-20062007-2-1
Semiconductor devices - Mechanical and climatic test methods - Part 1 : GeneralGB/T 4937.1-20062007-2-1
Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuitsGB/T 4589.1-20062007-2-1
Liquid crystal and solid-state display devices—Part 2:Liquid crystal display modules sectional specificationGB/T 18910.2-20032004-8-1
Semiconductor discrete devices Detail specification for type 3DG122 silicon UHF low-power transistorSJ 50033/160-20022003-3-1
Semiconductor discrete devices Detail specification for type 3DA506 silicon microwave pulse power transistorSJ 50033/157-20022003-3-1
Semiconductor discrete devices Detail specification for type 3DG252 sillcon microwave linearity transistorSJ 50033/155-20022003-3-1
Semiconductor discrete devices Detail specification for type 3DA505 silicon microwave pulse power transistorSJ 50033/156-20022003-3-1
Semiconductor discrete devices Detail specification for type 3DG251 silicon UHF low-noise transistorSJ 50033/154-20022003-3-1
Semiconductor discrete devices Detail specification for type 3DG44 silicon UHF low-noise transistorSJ 50033/158-20022003-3-1
Semiconductor discrete devices Detail specification for type 3DG142 silicon UHF low-noise transistorSJ 50033/159-20022003-3-1
Letter symbols for discrete semiconductor devicesGB/T 11499-20012002-6-1
Semiconductor devices --Sectional specification for discrete devicesGB/T 12560-19992000-3-1
Semiconductor devices Discrete devices and integrated circuits Part 1:GeneralGB/T 17573-19981999-6-1
Mechanical and climatic test methods for semiconductor devicesGB/T 4937-19951996-8-1
Semiconductor devices Discrete devices and integrated circuits Part 5: Optoelectronic devicesGB/T 15651-19951996-4-1
Semiconductor devices--Sectional specification for discrete devicesGB 12560-19901991-10-1
Test methods of safe operating area for power transistorsGB 12300-19901990-8-1
The rule of type designation for discrete semiconductorGB/T 249-19891990-4-1
Semiconductor devices Generic specification for discrete devices and integrated circuitsGB/T 4589.1-19891990-1-1
Reference methods of measurement for semiconductor devicesGB 6801-19861987-7-1
Mechanical and climatic test methods for discrete semiconductor devicesGB 4937-19851985-11-1
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