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Chinese National Standard Category: Semimetal and semiconductor material in general |
English Title: | Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method |
Chinese Title: | 硅外延层载流子浓度测定 汞探针电容-电压法 |
Standard No.: | GB/T 14146-2009 |
Category No.: | H80 |
Issued by: | AQSIQ, SAC |
Issued on: | 2009-10-30 |
Implemented on: | 2010-6-1 |
Status: | superseded |
Superseded by: | GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method |
Superseded on: | 2021-12-1 |
Abolished on: | |
Superseding: | GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method |
Word Count: | 6000 words |
Similar Standards: | GB/T 37051-2018 GB/T 29507-2013 GB/T 29057-2023 GB/T 16596-2019 GB/T 16595-2019 GB/T 14844-2018 GB/T 8756-2018 GB/T 34479-2017 GB/T 32279-2015 YS/T 985-2014 GB/T 30453-2013 GB/T 14863-2013 GB/T 30110-2013 GB/T 29505-2013 GB/T 29057-2012 YS/T 838-2012 GB/T 26069-2010 GB/T 26071-2010 GB/T 26068-2010 GB/T 14847-2010 |
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