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Chinese National Standard Category: Semimetal and semiconductor material in general

English Title: Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method
Chinese Title: 硅外延层载流子浓度测定 汞探针电容-电压法
Standard No.: GB/T 14146-2009
Category No.: H80
Issued by: AQSIQ, SAC
Issued on: 2009-10-30
Implemented on: 2010-6-1
Status: superseded
Superseded by:GB/T 14146-2021 Test method for carrier concentration of silicon epitaxial layers - Capacitance-voltage method
Superseded on:2021-12-1
Abolished on:
Superseding:GB/T 14146-1993 Silicon epitaxial layers--Determination of carrier concentration--Mercury probe Valtage-capacitance method
Word Count:6000 words
Similar Standards: GB/T 37051-2018   GB/T 29507-2013   GB/T 29057-2023   GB/T 16596-2019   GB/T 16595-2019   GB/T 14844-2018   GB/T 8756-2018   GB/T 34479-2017   GB/T 32279-2015   YS/T 985-2014   GB/T 30453-2013   GB/T 14863-2013   GB/T 30110-2013   GB/T 29505-2013   GB/T 29057-2012   YS/T 838-2012   GB/T 26069-2010   GB/T 26071-2010   GB/T 26068-2010   GB/T 14847-2010  
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