Standard No.:	GB/T 24581-2009
English Name:	Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
Chinese Name:	低温傅立叶变换红外光谱法测量硅单晶中III、V族杂质含量的测试方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Issued by:	AQSIQ;SAC
Issued on:	2009-10-30
Implemented on:	2010-6-1
Status:	superseded
Superseded by:	GB/T 24581-2022 Test method for Ⅲ and Ⅴ impurities content in single crystal silicon—Low temperature FT-IR analysis method
Superseded on:	2022-10-1
Language:	English
File Format:	PDF
Word Count:	6000 words
Price(USD):	170.00
Delivery:	via email in 1~3 business day

本标准适用于检测硅单晶中的电活性元素硼(B)、磷(P)、砷(As)、铝(Al)、锑(Sb)和镓(Ga)的含量。
本标准所适用的硅中每一种电活性元素杂质或掺杂剂浓度范围为(0.01×10-9~5.0×10-9)a。