| Title |
Standard No. |
Implemented On |
| Integrated test specification for high power conversion system in fusion device | T/CPSS 1006-2018 | |
| Low voltage active power filter | T/CPSS 1002-2018 | |
| Low-voltage static var generator | T/CPSS 1003-2018 | |
| Short-circuit test method for high power converter in fusion device | T/CPSS 1007-2018 | |
| Low voltage distribution network active unbalance compensation device | T/CPSS 1001-2018 | |
| Technical specification for performance test of PV-storage integrated converter | T/CPSS 1004-2018 | |
| Thyristor valves for high voltage direct current (HVDC) power transmission—Part 1:Electrical testing | GB/T 20990.1-2020 | 2021-7-1 |
| Performance of high-voltage direct current (HVDC) systems with line-commutated converters—Part 3:Dynamic conditions | GB/T 20996.3-2020 | 2021-7-1 |
| Static var compensators(SVC)—Testing of thyristor valves | GB/T 20995-2020 | 2021-7-1 |
| Performance of high-voltage direct current (HVDC) systems with line-commutated converters—Part 2:Faults and switching | GB/T 20996.2-2020 | 2021-7-1 |
| Bi-directional grid-connected power converters—Part 1:General requirements | GB/T 39572.1-2020 | 2021-7-1 |
| Technical specification of power electronic devices for high-voltage direct current(HVDC) transmission using voltage sourced converters(VSC) | GB/T 37660-2019 | 2020-1-1 |
| High voltage soft-start device by thyristor phase control | GB/T 37405-2019 | 2019-12-1 |
| Application guide of soft-start device for high-voltage motor | GB/T 37404-2019 | 2019-12-1 |
| Energy-saving power supply equipment with inverter for lift | GB/T 37319-2019 | 2019-10-1 |
| Variable-frequency drive for metallurgical industry | GB/T 37009-2018 | 2019-7-1 |
| Technical specification of converter valves for high-voltage direct current power transmission using voltage sourced converters | GB/T 37010-2018 | 2019-7-1 |
| Thyristor valves for HVDC transmission | GB/T 36559-2018 | 2019-2-1 |
| Terminology for high-voltage direct current(HVDC) transmission | GB/T 13498-2017 | 2018-7-1 |
| Specification of system design for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC) | GB/T 35703-2017 | 2018-7-1 |
| Power losses in voltage sourced converter(VSC)valves for high-voltage direct current(HVDC)systems―Part 1:General requirements | GB/T 35702.1-2017 | 2018-7-1 |
| Power losses in voltage sourced converter(VSC)valves for high-voltage directcurrent (HVDC) systems―Part 2:Modular multilevel converters | GB/T 35702.2-2017 | 2018-7-1 |
| Variable-frequency drive of 1 kV and below―Part 3:Safety requirements | GB/T 30844.3-2017 | 2018-4-1 |
| Variable-frequency drive above 1 kV and not exceeding 35 kV―Part 3:Safety requirements | GB/T 30843.3-2017 | 2018-4-1 |
| General requirements for press-pack insulate gate bipolar transistors (IGBT) for flexible transmission | T/CEC 155-2018 | 2018-4-1 |
| Terminology for voltage-sourced converters ( VSC) for high voltage direct current (HVDC) systems | GB/T 34118-2017 | 2018-2-1 |
| Motor soft-start device--Method of type designation | GB/T 33595-2017 | 2018-2-1 |
| Motor soft-start device--Terminology | GB/T 33984-2017 | 2018-2-1 |
| Technical specification of converters for high-voltage direct current (HVDC) transmission using voltage sourced converters ( VSC) | GB/T 34139-2017 | 2018-2-1 |
| Technical code of converter for photovoltaic air-conditioner | T/CEEIA 292-2017 | 2017-12-29 |
| Semiconductor devices―Discrete devices and integrated circuits― Part 2: Rectifier diodes | GB/T 4023-2015 | 2017-1-1 |
| Semiconductor devices — Part 6: Thyristors | GB/T 15291-2015 | 2017-1-1 |
| Variable-frequency drive for machine tool | GB/T 32505-2016 | 2016-9-1 |
| Thyristor valves of multistage controlled shunt reactors in extra high-voltage transmission systems | GB/T 32516-2016 | 2016-9-1 |
| Variable-frequency drive for injection molding machine | GB/T 32515-2016 | 2016-9-1 |
| Direct current de-icing devices―Part 3:Tests | GB/T 31487.3-2015 | 2015-12-1 |
| Direct current de-icing devices―Part 1:System design and application guide | GB/T 31487.1-2015 | 2015-12-1 |
| Direct current de-icing devices―Part 2:Thyristor valves | GB/T 31487.2-2015 | 2015-12-1 |
| Variable-frequency drive of 1kV and below—Part 2：Test methods | GB/T 30844.2-2014 | 2015-1-22 |
| Variable-frequency drive above 1kV and not exceeding 35kV—Part 2: Test methods | GB/T 30843.2-2014 | 2015-1-22 |
| Variable-frequency drive of 1 kV and below—Part 1: Technical conditions | GB/T 30844.1-2014 | 2015-1-22 |
| Variable-frequency drive above 1kV and not exceeding 35kV—Part 1: Technical conditions | GB/T 30843.1-2014 | 2015-1-22 |
| High-voltage Direct Current Power Transmission Using Voltage Sourced Converters | GB/T 30553-2014 | 2014-10-28 |
| Design guidelines of thyristor valves for high voltage direct current（HVDC）power transmission | GB/Z 30424-2013 | 2014-7-13 |
| Water Cooling Equipment for Converter Valves for High Voltage Direct Current (HVDC) Power Transmission | GB/T 30425-2013 | 2014-7-13 |
| Static var compensators(SVC)—System design and application guidelines | GB/Z 29630-2013 | 2013-12-2 |
| Semiconductor converters—General requirements and line commutated converters—Part 1-1:Specification of basic requirements | GB/T 3859.1-2013 | 2013-12-2 |
| Semiconductor converters—General requirements and line commutated converters—Part 1-3:Transformers and reactors | GB/T 3859.3-2013 | 2013-12-2 |
| Semiconductor converters—Electrical test methods | GB/T 13422-2013 | 2013-12-2 |
| Semiconductor converters—General requirements and line commutated converters—Part 1-2:Application guide | GB/T 3859.2-2013 | 2013-12-2 |
| Water cooling equipment for static var compensators | GB/T 29629-2013 | 2013-12-2 |
| Electrical testing of thyristor valves for ±800 kV ultra high voltage direct current (UHVDC) power transmission | GB/T 28563-2012 | 2012-11-1 |
| Low-voltage active power filter (APF) | JB/T 11067-2011 | 2012-4-1 |
| Low-voltage reactive power dynamic compensation equipment with zero transition | GB/T 25839-2010 | 2011-9-1 |
| Charging equipment for industrial batteries | JB/T 10095-2010 | 2010-7-1 |
| AC solid-state relays | JB/T 11050-2010 | 2010-7-1 |
| Rectifier equipment for DC system in electric power engineering | JB/T 10979-2010 | 2010-7-1 |
| Thyristor a.c. power controllers | JB/T 3283-2010 | 2010-7-1 |
| General requirements for light-trigged thyristors for HVDC transmission | GB/T 21420-2008 | 2008-9-1 |
| Semiconductor convertors - Identification code for convertor connections | GB/T 21226-2007 | 2008-5-20 |
| General requirements for thyristors for HVDC transmission | GB/T 20992-2007 | 2008-2-1 |
| Determination of power losses in high-voltage direct current(HVDC)converter stations | GB/T 20989-2007 | 2008-2-1 |
| Thyristor valves for high voltage direct current(HVDC)power transmission—Part 1:Electrical testing | GB/T 20990.1-2007 | 2008-2-1 |
| Power electronics for electrical transmission and distribution systems—Testing of thyristor valves for static VAR compensators | GB/T 20995-2007 | 2008-2-1 |
| Performance of high-voltage direct current(HVDC)systems—Part 2:Faults and switching | GB/Z 20996.2-2007 | 2008-2-1 |
| Performance of high-voltage direct current (HVDC)systems—Part 3:Dynamic conditions | GB/Z 20996.3-2007 | 2008-2-1 |
| Performance of high-voltage direct current(HVDC) systems—Part 1:Steady-state conditions | GB/Z 20996.1-2007 | 2008-2-1 |
| Terminology for high-voltage direct current(HVDC)transmission | GB/T 13498-2007 | 2008-2-1 |
| Guide for compatibility and protection of interference effects between semiconductor convertors and power supply system | GB/T 10236-2006 | 2007-4-1 |
| Technical Requirements and Testing Methods for Overvoltage and Overcurrent of IDC Terminations | YD/T 1541-2006 | 2007-1-1 |
| High voltage variable frequency drive used in draft fan and pump of power plant | DL/T 994-2006 | 2006-10-1 |
| Technical Specifications for Energy Conservation Product Certification for Line Traps for AC Power System | CCEC/T 06-2006 | 2006-2-23 |
| Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A | GB/T 13150-2005 | 2005-10-1 |
| Semiconductor devices - Discrete devices - Part 6: thyristors - Section three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents | GB/T 13151-2005 | 2005-10-1 |
| Ceramic parts of case for power semiconductor devices | JB/T 10501-2005 | 2005-9-1 |
| Rings for dies of semiconductor devices | JB/T 5842-2005 | 2005-9-1 |
| Components of gate terminal for power semiconductor devices | JB/T 5835-2005 | 2005-9-1 |
| Connectors for power semiconductor devices | JB/T 5843-2005 | 2005-9-1 |
| Semiconductor converter - Self-commutated semiconductor converters including direct d.c.converters | GB/T 3859.4-2004 | 2004-12-2 |
| Measuring method of thermal resistance and input fluid-output fluid pressure difference of heat sink for power semiconductor device | GB/T 8446.2-1987 | 2004-8-1 |
| Heat sink for power semiconductor device—Part 1:Casting kind series | GB/T 8446.1-2004 | 2004-8-1 |
| Heat sink for power semiconductor device - Part 2: Measuring method of thermal resistance and imput fluid-output fluid pressure difference | GB/T 8446.2-2004 | 2004-8-1 |
| Semiconductor power convertors--Adjustable speed electric drive systems--General requirements--Part 1:Rating specifications,particularly for d.c.motor drives | GB/T 3886.1-2001 | 2002-6-1 |
| Selecting guide of heat sink for power semiconductor device | JB/T 9684-2000 | 2000-10-1 |
| Case for power semiconductor device | JB/T 10097-2000 | 2000-10-1 |
| Selection guidance of case for power semiconductor device | JB/T 10096-2000 | 2000-10-1 |
| Semiconductor converter - Part 6: Application guide for the protection of semiconductor converters against overcurrent by fuses | GB/T 17950-2000 | 2000-8-1 |
| Insulated Gate Bipolar Transistor Modules Arm and Pair of Arms | JB/T 8951.2-1999 | 2000-1-1 |
| Insulated Gate Bipolar Transistor | JB/T 8951.1-1999 | 2000-1-1 |
| Rectifying Equipment for Traction Substations | JB/T 9689-1999 | 2000-1-1 |
| Thyristor rectifiers intended to be used in charging and float charging of batteries | JB/T 10095-1999 | 2000-1-1 |
| Rectifier Diodes for Rotating Excitation | JB/T 9686-1999 | 2000-1-1 |
| Type designation for power semiconductor device | JB/T 2423-1999 | 2000-1-1 |
| Outline dimensions of extruded heat sink for power semiconductor devices | JB/T 8175-1999 | 2000-1-1 |
| High Voltage Rectifier Stack | JB/T 9685-1999 | 2000-1-1 |
| Type Designation of Measuring Equipments for Power Semiconductor Devices | JB/T 4219-1999 | 2000-1-1 |
| Molybdenum Disk for Power Semiconductor Devices | JB/T 9687.1-1999 | 2000-1-1 |
| General Rectifier Diodes with Electric Current Lower than 100A | JB/T 8949.1-1999 | 2000-1-1 |
| Heat sink for power semiconductor device | GB/T 8446.1-1987 | 1999-5-1 |
| Semiconductor direct d. c. convertors | GB/T 7677-1987 | 1999-5-1 |
| Semiconductor self-commutated convertors | GB/T 7678-1987 | 1999-5-1 |
| Selection Guidance of Case for Power Semiconductor Device | JB/T 10096-1999 | 1999-4-5 |
| Hot Pipe Radiators Intended to be Used in Power Semiconductor Devices | JB/T 8757-1998 | 1998-12-1 |
| Criteria for Value Determination of Parameters of Thyristor | JB/T 8758-1998 | 1998-12-1 |
| Rectifier for electrochemistry | JB/T 8740-1998 | 1998-11-1 |
| Aluminum Nitride Ceramics Substrate Intended to Be Used in Power Semiconductor Modules | JB/T 8736-1998 | 1998-11-1 |
| Measuring methods for insulated-gate bipolar transistor | GB/T 17007-1997 | 1998-8-1 |
| Terminology and letter symbols for insulated-gate bipolar transistor | GB/T 17008-1997 | 1998-8-1 |
| Terminal markings for valve device stacks and assemblies and for power convertor equipment | GB/T 16859-1997 | 1998-3-1 |
| Blank detail specification for rectifier diodes (including avalanche rectifier diodes), ambient and case-rated, for currents greater than 100A | GB/T 16894-1997 | 1998-3-1 |
| Rectifier Intended to Be Used in Electrophoretic Coating | JB/T 8675-1997 | 1998-2-1 |
| Construction Parts of Electric Semiconductor Modules | JB/T 8661-1997 | 1998-2-1 |
| Semiconductor Frequency Changing Unit Intended to Be Used in Medium Frequency Induction Heating | JB/T 8669-1997 | 1998-2-1 |
| Bi-directional Thyristor | JB/T 4192-1996 | 1997-7-1 |
| Single-phase Bridge Module for MTQ (MFQ) Series Thyristors | JB/T 7826.2-1996 | 1997-1-1 |
| High Frequency Thyristors | JB/T 8454-1996 | 1997-1-1 |
| Packing of Power Semiconductor Parts | JB/T 4277-1996 | 1997-1-1 |
| Single-phase Bridge Module for MTS (MFS) Series Thyristors | JB/T 7826.3-1996 | 1997-1-1 |
| Coated Quartz Glass Tubes Intended to Be Used in the Production Process of Power Semiconductor Devices | JB/T 8320-1996 | 1996-10-1 |
| Avalanche Rectifier Diode and Accessories Intended to Be Used in Motor Vehicles - UB Series Bridge Avalanche Rectifier Assemblies Intended to Be Used in Motor Vehicles | JB/T 7821-1995 | 1996-7-1 |
| Avalanche Rectifier Diode and Accessories Intended to Be Used in Motor Vehicles - Avalanche Rectifier Intended to Be Used in Diode ZQ Series 15A-50A Motor Vehicles | JB/T 7820-1995 | 1996-7-1 |
| MT and MF Series Thyristor Modules with Pair of Arms | JB/T 7826.1-1995 | 1996-7-1 |
| Sampling Method for Test of Power Semiconductor Devices | JB/T 7786-1995 | 1996-1-1 |
| Measuring methods for thyristor - Gate turn-off thyristor | GB/T 15293-1994 | 1995-10-1 |
| Semiconductor devices Part 6 Thyristors | GB/T 15291-1994 | 1995-10-1 |
| Measuring methods for thyristor Reverse conducting triode thyristor | GB/T 15292-1994 | 1995-10-1 |
| UDC Series Triphase High Voltage Rectifier Assemblies | JB/T 7560-1994 | 1995-6-1 |
| Compensation Type AC Voltage Regulators | JB/T 7620-1994 | 1995-6-1 |
| Case of Rectifier Diodes Intended to Be Used in Motor Vehicles | JB/T 7623-1994 | 1995-6-1 |
| Test Method for Two-way Triple Pole Thyristors | JB/T 7619-1994 | 1995-6-1 |
| Test Method for Thyristor Modules - Pair of Arms and Anti-parallel Pair of Arms | JB/T 7625.2-1994 | 1995-6-1 |
| Test Method for Thyristor Modules - Single-phase Bridges and Triphase Bridges | JB/T 7625.3-1994 | 1995-6-1 |
| High alumina refractory mortars | GB/T 2994-1994 | 1995-1-1 |
| Rated Voltage and Current of Power Semiconductor Devices | JB/T 7063-1993 | 1994-1-1 |
| Silicon Wafers Intended to Be Used in Power Semiconductor Devices | JB/T 7061-1993 | 1994-1-1 |
| KB Series Two Pole Thyristors for Overvoltage Protection | JB/T 7060-1993 | 1994-1-1 |
| Guide for Preparation of Standard for Power Semiconductor Modules | JB/T 7059-1993 | 1994-1-1 |
| Terminology for high-voltage direct current transmission | GB/T 13498-1992 | 1993-3-1 |
| Test Method for Power Semiconductor Module Arm and Pair of Arms of Bipolar Transistor | JB/T 6307.4-1992 | 1993-1-1 |
| Thyristors Intended to be Used in KE Model 50A-500A Welding Machines | JB/T 6324-1992 | 1993-1-1 |
| Test Method for Power Semiconductor Module Single-phase Bridge Rectifier Diodes | JB/T 6307.2-1992 | 1993-1-1 |
| Hot-chamber diecasting machine Part 2: Testing of the accuracy | JB/T 6307.1-1992 | 1993-1-1 |
| Centrifugal casting machine -- Technical requiremnets | JB/T 6305-1992 | 1993-1-1 |
| ZQ Series 5A-50A Rectifier Diodes Intended to be Used in Motor Vehicles | JB/T 6321-1992 | 1993-1-1 |
| Test Method for Power Semiconductor Module Triphase Bridge Rectifier Diode | JB/T 6307.3-1992 | 1993-1-1 |
| Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, above 100A | GB 13151-1991 | 1992-5-1 |
| Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A | GB/T 13150-1991 | 1992-5-1 |
| Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and above | GB/T 13153-1991 | 1992-5-1 |
| Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above | GB/T 13152-1991 | 1992-5-1 |
| Guide for evaluuation of interference effects and com-patibility technology between semiconductor convertorsand power supply systen | GB 10236-1988 | 1990-1-1 |
| Insulators and fasteners for heat sink for power semiconductor device | GB/T 8446.3-1988 | 1989-9-1 |
| Specification for carrier systems supergroup translating equipment | GB 5367-1985 | 1986-5-1 |
| Method for Designing Types of Power Semiconductor Converters | JB/T 1505-1975 | 1975-7-1 |
