| Title |
Standard No. |
Implemented On |
| Measurement of quartz crystal unit parameters—Part 9:Measurement of spurious resonances of piezoelectric crystal units | GB/T 22319.9-2018 | 2018-10-1 |
| Measurement of quartz crystal unit parameters—Part 11:Standard method for the determination of the load resonance frequency fL and the effective load capacitance C Leff using automatic network analyzer techniques and error correction | GB/T 22319.11-2018 | 2018-10-1 |
| Quartz crystal units of assessed quality-Part 1:Generic specification | GB/T 12273.1-2017 | 2017-12-1 |
| Synthetic quartz crystal wafer for optical low pass filter(OLPF) | GB/T 32988-2016 | 2017-9-1 |
| Generic specification for piezoelectric ceramic transducing elements | GB/T 15156-2015 | 2016-2-1 |
| Measurement of quartz crystal unit parameters―Part 7:Measurement of activity dips of quartz crystal units | GB/T 22319.7-2015 | 2016-2-1 |
| Single Crystal Wafers for Surface Acoustic Wave (SAW) Device Applications - Specifications and Measuring Methods | GB/T 30118-2013 | 2014-5-15 |
| Langasite piezoelectric crystal | JC/T 2148-2012 | 2013-6-1 |
| Determination of doped and trace elements in barium strontium titanate(BST)—Inductively coupled plasma atomic emission spectrometric method | JC/T 2132-2012 | 2013-6-1 |
| Test method for extinction ratio of optical crystal | GB/T 11297.12-2012 | 2013-6-1 |
| Quartz crystal controlled oscillators of assessed quality - Part 1: Generic specification | GB/T 12274.1-2012 | 2013-2-15 |
| Designations for piezoelectric crystals | GB/T 9532-2012 | 2013-2-15 |
| Piezoelectric ceramic resonators - A specification in the IEC quality assessment System for electronic components(IECQ) - Part 1: Generic specification-Qualification approval | GB/T 12859.1-2012 | 2013-2-15 |
| Synthetic quartz crystal － Specifications and guide to the use | GB/T 3352-2012 | 2013-2-15 |
| Piezoelectric ceramic resonators - A specification in the IEC quality assessment System for electronic components (IECQ) - Part 2: Sectional specification-Qualification approval | GB/T 12859.2-2012 | 2013-2-15 |
| Quartz crystal units A specification in the quality assessment system for electronic components Part 5.1: Blank detail specification- qualification approval | GB/T 12273.501-2012 | 2013-2-15 |
| Piezoelectric ceramic resonators - A specification in the quality assessment System for electronic components - Part 2-1: Blank detail specification-Assessment level E | GB/T 12859.201-2012 | 2013-2-15 |
| Surface acoustic wave(SAW) filters of assessed quality - Part 1: Generic specification | GB/T 27700.1-2011 | 2012-5-1 |
| Surface acoustic wave(SAW) filters of assessed quality—Part 2:Guidance on use | GB/T 27700.2-2011 | 2012-5-1 |
| Lead magnesium niobate titanate (PMNT) piezoelectric single crystals | JC/T 2025-2010 | 2011-3-1 |
| Piezoelectric filters of assessed quality - Part 1: Generic sepcification | GB/T 22317.1-2008 | 2009-1-1 |
| Surface acoustic wave(SAW)resonators - Part 1-1: General information and standard values | GB/T 22318.1-2008 | 2009-1-1 |
| Measurement of quartz crystal unit parameters - Part 8: Test fixture for surface mounted quartz crystal units | GB/T 22319.8-2008 | 2009-1-1 |
| Surface acoustic wave(SAW)resonators - Part 1-2: Test conditions | GB/T 22318.2-2008 | 2009-1-1 |
| Lithium niobate single crystals | YS/T 554-2006 | 2006-10-11 |
| Quartz crystal controlled oscillators of assessed quality - Part 5: Sectional specification-Qualification approval | SJ/T 11257-2001 | 2002-5-1 |
| Quartz crystal controlled oscillators of assessed quality - Part 1: Generic specification | SJ/T 11256-2001 | 2002-5-1 |
| Quartz crystal controlled oscillators of assessed quality - Part 5-1: Blank detail specification Qualification approval | SJ/T 11258-2001 | 2002-5-1 |
| Measurement of quartz crystal unit parameters Part 6: Measurement of drive level dependence (DLD) | SJ/T 11212-1999 | 1999-12-1 |
| Measurement of quartz crystal unit parameters Part 4: Method for the measurement of the load resonance frequency fl, load resonance resistance Rl and the calculation of other derived v | SJ/T 11210-1999 | 1999-12-1 |
| Measurement of quartz crystal unit parameters Part 5: Method for the determination of equivalent electrical parameters using automatic network analyzer techniques and error correction | SJ/T 11211-1999 | 1999-12-1 |
| Detailed Specifications of XJ 33 Quartz Crystal Component | QJ 2979-1997 | 1997-10-17 |
| Quartz crystal units-A specification in the Quality Assessment System for Electronic Components Part 3: Sectional specification - Qualification approval | GB/T 16517-1996 | 1997-5-1 |
| Quartz crystal units-A specification in the Quality Assessment system for Electronic Components - Part 1: Generic specification | GB/T 12273-1996 | 1997-5-1 |
| Quartz crystal units-A specification in the Quality Assessment System for Electronic Components Part 2: Sectional specification—Capability approval | GB/T 16516-1996 | 1996-5-1 |
| Generic specification for piezoelectric ceramic transducing elements | GB/T 15156-1994 | 1995-2-1 |
| The rule of type designation for quarz crystal oscillators | GB 12275-1990 | 1990-10-1 |
| Quartz orystal controlled oscillators-Generic specification | GB 12274-1990 | 1990-10-1 |
| Quartz crystal units--Generic specification for | GB 12273-1990 | 1990-10-1 |
| The rule of type designation for quarz crystal oscillators | GB/T 12275-1990 | 1990-10-1 |
| Designations for LiNbO3,LiTaO3,Bi12GeO20,Bi12SiO20 piezoelectric crystals | GB 9532-1988 | 1989-2-1 |
| Holders (Enclosures), crystal, general specification for | GB 8553-1987 | 1988-6-1 |
| The rule of type designation for quartz crystal units | GB 6429-1986 | 1987-5-1 |
| Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG201C | GB 5820.3-1986 | 1986-9-1 |
| Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK106A, 3DK106B | GB 5821.1-1986 | 1986-9-1 |
| Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification types 3DG111B, 3DG111C, 3DG111E, 3DG111F | GB 5820.2-1986 | 1986-9-1 |
| Detail specification for electronic components--Bipolar transistors for ambient-rated low and high frequency amplification of types 3DG130A, SDG130B, 3DG130C, 3DG 130D | GB 5820.1-1986 | 1986-9-1 |
