2025-12-21 216.73.216.41
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Code of China
Chinese National Standard List: Semiconductor triode

GB 4587-1984 Measuring methods for bipolar transistors 
  Issued on:   Translation Price(USD): 1270.0
GB 9508-1988 Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification 
  Issued on:   Translation Price(USD): 160.0
GB 9512-1988 Detail specification for electronic components--Case-rated transistor for type 3CD546 silicon PNP for low frequency amplification 
  Issued on:   Translation Price(USD): 190.0
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications 
  Issued on: 1996-7-1   Translation Price(USD): 180.0
GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification 
  Issued on: 1998-1-1   Translation Price(USD): 210.0
GB 7578-1987 Detail specification for electronic component--Case-rated bipolar transistor for types 3DA150B, 3DA150C for high-frequency amplification 
  Issued on: 1987-03-27   Translation Price(USD): 160.0
GB 9510-1988 Detail specification for electronic components--Ambient-rated transistor for type 3DG2271 silicon NPN for high frequency amplification 
  Issued on:   Translation Price(USD): 160.0
GB/T 6571-1995 Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes 
  Issued on: 1995-7-2   Translation Price(USD): 520.0
GB 10273-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140 
  Issued on:   Translation Price(USD): 160.0
GB 6357-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201C 
  Issued on:   Translation Price(USD): 180.0
GB 9511-1988 Detail specification for electronic components--Case-rated transistor for type 3DD401 silicon NPN for low frequency amplification 
  Issued on:   Translation Price(USD): 180.0
GB 6353-1986 Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79 
  Issued on:   Translation Price(USD): 240.0
GB 7576-1987 Blank detail specification for case -rated bipolar transistors for high--frequncy amplification (Applicable for certification) 
  Issued on:   Translation Price(USD): 210.0
GB 7148-1987 Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116 
  Issued on: 1987-01-07   Translation Price(USD): 250.0
SJ 50033/176-2007 semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistor 
  Issued on: 2008-1-24   Translation Price(USD): 120.0
GB/T 4587-1994 Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors 
  Issued on: 1994-12-31   Translation Price(USD): 900.0
GB/T 11590-1989 International data transmission services and optional user facilities in public data networks 
  Issued on: 1989-08-01   Translation Price(USD): 90.0
GB 9513-1988 Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD100C 
  Issued on:   Translation Price(USD): 130.0
SJ 50033/172-2007 semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor 
  Issued on: 2008-1-24   Translation Price(USD): 150.0
GB 9516-1988 Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG 2636 
  Issued on:   Translation Price(USD): 160.0
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