| Title |
Standard No. |
Implemented On |
| International data transmission services and optional user facilities in public data networks | GB/T 11590-1989 | |
| Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) | GB/T 29332-2012 | 2013-6-1 |
| semiconductro discrete devices detail specification for type 3da516 silicon microwave pulse power transistor | SJ 50033/170-2007 | 2008-2-1 |
| semiconductro discrete devices detail specification for type 3da519 silicon microwave pulse power transistor | SJ 50033/172-2007 | 2008-2-1 |
| semiconductro discrete devices detail specification for type 3da523 silicon microwave pulse power transistor | SJ 50033/176-2007 | 2008-2-1 |
| Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor | SJ 50033/166-2004 | 2004-12-1 |
| Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor | SJ 50033/168-2004 | 2004-12-1 |
| Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor | SJ 50033/167-2004 | 2004-12-1 |
| Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor | SJ 50033/169-2004 | 2004-12-1 |
| Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors | SJ 50033/163-2003 | 2004-3-1 |
| Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor | SJ/T 11227-2000 | 2000-10-1 |
| Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor | SJ/T 11226-2000 | 2000-10-1 |
| Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor | SJ/T 11225-2000 | 2000-10-1 |
| Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz | GB/T 6219-1998 | 1999-6-1 |
| Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification | GB/T 6217-1998 | 1999-6-1 |
| devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification | GB/T 7576-1998 | 1999-6-1 |
| detail specification for case-rated bipolar transistors for low-frequency amplification | GB/T 7577-1996 | 1997-1-1 |
| Semiconductor devices - Discrete devices - Part 3 : Signal(including switching)and regulator diodes | GB/T 6571-1995 | 1996-4-1 |
| Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors | GB/T 4587-1994 | 1995-8-1 |
| Semiconductor devices－Discrete devices－Part 8: Field-effect transistors | GB/T 4586-1994 | 1995-8-1 |
| Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140 | GB 10273-1988 | 1989-8-1 |
| Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A | GB 9515-1988 | 1989-2-1 |
| Detail specification for electronic components--Case-rated transistor for type 3DD401 silicon NPN for low frequency amplification | GB 9511-1988 | 1989-2-1 |
| Detail specification for electronic components--Ambient-rated transistor for type 3CG844 silicon PNP for high frequency amplification | GB 9507-1988 | 1989-2-1 |
| Detail specification for electronic components--Ambient-rated transistor for type 3DG2271 silicon NPN for high frequency amplification | GB 9510-1988 | 1989-2-1 |
| Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification | GB 9509-1988 | 1989-2-1 |
| Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD207 | GB 9520-1988 | 1989-2-1 |
| Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD100C | GB 9513-1988 | 1989-2-1 |
| Detail specification for electronic components--Ambie-nt-rated transistor for type 3DG1815 silicon NPN for high frequency amplification | GB 9522-1988 | 1989-2-1 |
| Detail specification for electronic components--Case-rated transistor for type 3CD546 silicon PNP for low frequency amplification | GB 9512-1988 | 1989-2-1 |
| Detail specification for electronic components high-frequency amplification transistor for silicon NPN ambient-rated for type 3DG 2636 | GB 9516-1988 | 1989-2-1 |
| Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification | GB 9508-1988 | 1989-2-1 |
| Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG107 | GB 9500-1988 | 1988-12-1 |
| Blank detail specification for case-rated bipolar transistors for low-frequency amplification | GB 7577-1987 | 1987-11-1 |
| Detail specification for electronic component--Case-rated bipolar transistor for types 3DA150B, 3DA150C for high-frequency amplification | GB 7578-1987 | 1987-11-1 |
| Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification | GB 7579-1987 | 1987-11-1 |
| Detail specification for electronic components--Case-rated bipolar transistors for low-frequency amplification, type 3DD102B | GB 7580-1987 | 1987-11-1 |
| of outlines for semiconductor discrete devices | GB/T 7581-1987 | 1987-11-1 |
| Detail specification for electronic components--Ambient-rated bipolar transistors for high-frequency amplification type 3DG131A, 3DG131B, 3DG131C | GB 7151-1987 | 1987-9-1 |
| Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107B | GB 7150-1987 | 1987-9-1 |
| Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116 | GB 7148-1987 | 1987-9-1 |
| Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105B | GB 7149-1987 | 1987-9-1 |
| Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80 | GB 7147-1987 | 1987-9-1 |
| Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79 | GB 6353-1986 | 1987-1-1 |
| Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201C | GB 6357-1986 | 1986-12-1 |
| Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CG21B, 3CG21C | GB 6355-1986 | 1986-12-1 |
| Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C | GB 6356-1986 | 1986-12-1 |
