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Chinese National Standard List: Semiconductor emitting device

Title Standard No. Implemented On
Organic light emitting diode (OLED) displays—Part 6-3:Measuring methods of image qualityGB/T 20871.63-20212022-6-1
Liquid crystal display devices—Part 20-1:Visual inspection—Monochrome liquid crystal display cellsGB/T 18910.201-20212022-5-1
Liquid crystal display devices—Part 20-2:Visual inspection—Monochrome matrix liquid crystal display modulesGB/T 18910.202-20212022-5-1
Liquid crystal display devices—Part 10-2:Environmental, endurance and mechanical test methods—Environmental and enduranceGB/T 18910.102-20212022-5-1
Liquid crystal display devices—Part 6-1:Measuring methods for liquid crystal display devices—Photoelectric parameterGB/T 18910.61-20212022-5-1
Optical radiation safety of LEDs—Part 1: Safety requirements and classificationGB/T 39771.1-20212021-10-1
Optical radiation safety of LEDs—Part 2: Measurement methodsGB/T 39771.2-20212021-10-1
Semiconductor optoelectronic devices—Blank detail specification for lower power light-emitting diodesGB/T 36359-20182019-1-1
Technical specification for power light-emitting diode chipsGB/T 36356-20182019-1-1
Semiconductor optoelectronic devices--Blank detail specification for middle power light-emitting diodesGB/T 36360-20182019-1-1
Technical specification for middle power light-emitting diode chipsGB/T 36357-20182019-1-1
Measuring methods for optical proerties of LEDsJB/T 10875-20082008-11-1
Semiconductor optoelectronic devices detail specification for type GR8813 infrared emitting diodeSJ 53930/1-20022002-5-1
Detail specification for electronic component--Semiconductor green light emiting diodes for types FG341052 and FG343053GB 9492-19881988-12-1
Detail specification for electronic component--Semiconductor red light emiting diodes for types FG313052 FG314053 FG313054 and FG314055GB 9493-19881988-12-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Forward Series ResistanceSJ 2658.5-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for the Intensity Space Distribution and Half-intensity Angle of RadiationSJ 2658.9-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Normal RadianceSJ 2658.8-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Pulse Response CharacteristicsSJ 2658.11-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Output Optical Power Temperature CoefficientSJ 2658.13-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - General RulesSJ 2658.1-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Peak Emission Wavelength and Spectral Half WidthSJ 2658.12-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Output Optical PowerSJ 2658.6-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Backward VoltageSJ 2658.3-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Forward Voltage DropSJ 2658.2-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Modulated Wideband SJ 2658.10-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for CapacitanceSJ 2658.4-19861986-10-1
Methods of Measurement for Semiconductor Infrared Diodes - Methods of Measurement for Radiant FluxSJ 2658.7-19861986-10-1
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