2025-12-22 216.73.216.41
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 6421-1986 Methods for drawing energy flow diagram of industrial enterprise 340.0 via email in 1~3 business day abolished2005-10-14 ,,1987-4-1
SJ 1789-1981 Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
GB/T 29118-2012 Evaluating guide for resource conserving government agencies 180.0 via email in 1~3 business day superseded,2024-4-1,2013-6-1
SJ/T 10951-1996 Detailed specifications for electronic components - 2CZ33 ambient-rated silicon rectifier diodes (Applicable for certification) 300.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ 1425-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA106 60.0 via email in 1~3 business day valid,,1979-7-1
GB/T 25328-2010 Monitoringandtestingforenergysavingofglasskil 140.0 via email in 1~3 business day valid,,2011-2-1
GB/T 2588-2000 The general principles for calculation of thermal efficiency of equipment 60.0 via email in 1~3 business day abolished2017-12-15,,2000-9-1
GB/T 5623-2008 Guide for the electricity consumption quota determination and regulation of product 124.0 via email in 1~3 business day valid,,2009-5-1
SJ 2278-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72 180.0 via email in 1~3 business day abolished2010-01-20 ,,1983-10-1
SJ/T 10031-1991 Detail specification for electronic component currect regulator diodes for types 2DH1~14 190.0 via email in 1~3 business day abolished2010-01-20,,1991-7-1
SJ 769-1974 Detail specification for silion NPN epitaxial planar low-frequency high power transistors,Type 3DD56 and 3DD57 180.0 via email in 1~3 business day valid,,1974-10-1
SJ 1995-1981 Detail specification for N channel junction pair field-effect transistors, Type CS25 180.0 via email in 1~3 business day abolished2010-01-20 ,,1982-7-1
SJ 2276-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114 180.0 via email in 1~3 business day abolished2010-01-20 ,,1983-10-1
YS/T 694.1-2009 The norm of energy consumption per unit product of wrought aluminium and aluminium alloy—Part 1:ingot for casting 150.0 via email in 1~3 business day superseded,2018-4-1,2010-6-1
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes 184.0 via email in 1~3 business day superseded,2015-10-1,1984-7-1
SJ 2558-1984 Detail specification for semiconductor light emitting numeric displays, Type SM1~18 180.0 via email in 1~3 business day abolished2010-01-20 ,,1985-5-1
SJ/T 9560.19-1993 Sealed solid micro-relay--Quality grading standard 180.0 via email in 1~3 business day abolished2010-01-20 ,,1994-1-1
GB/T 17358-2009 Power consumption measurement and testing in heat treating production 100.0 via email in 1~3 business day valid,,2009-11-1
SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD267 and 3CD467 180.0 via email in 1~3 business day abolished2010-01-20 ,,1984-3-1
SJ 1838-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29 104.0 via email in 1~3 business day superseded,2016-9-1,1982-5-1
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GB/T 6421-1986 Methods for drawing energy flow diagram of industrial enterprise 
  Issued on: 1986-05-27   Price(USD): 340.0
SJ 1789-1981 Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
GB/T 29118-2012 Evaluating guide for resource conserving government agencies 
  Issued on: 2012-12-31   Price(USD): 180.0
SJ/T 10951-1996 Detailed specifications for electronic components - 2CZ33 ambient-rated silicon rectifier diodes (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 300.0
SJ 1425-1978 Detail specification for silicon NPN high-frequency high power transistors,Type 3DA106 
  Issued on: 1979-7-1   Price(USD): 60.0
GB/T 25328-2010 Monitoringandtestingforenergysavingofglasskil 
  Issued on: 2010-11-10   Price(USD): 140.0
GB/T 2588-2000 The general principles for calculation of thermal efficiency of equipment 
  Issued on: 2000-3-16   Price(USD): 60.0
GB/T 5623-2008 Guide for the electricity consumption quota determination and regulation of product 
  Issued on: 2008-9-18   Price(USD): 124.0
SJ 2278-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72 
  Issued on: 1983-01-14   Price(USD): 180.0
SJ/T 10031-1991 Detail specification for electronic component currect regulator diodes for types 2DH1~14 
  Issued on: 1991-04-08   Price(USD): 190.0
SJ 769-1974 Detail specification for silion NPN epitaxial planar low-frequency high power transistors,Type 3DD56 and 3DD57 
  Issued on: 1974-10-1   Price(USD): 180.0
SJ 1995-1981 Detail specification for N channel junction pair field-effect transistors, Type CS25 
  Issued on: 1982-01-03   Price(USD): 180.0
SJ 2276-1983 Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114 
  Issued on: 1983-01-14   Price(USD): 180.0
YS/T 694.1-2009 The norm of energy consumption per unit product of wrought aluminium and aluminium alloy—Part 1:ingot for casting 
  Issued on: 2009-12-4   Price(USD): 150.0
SJ 2354.6-1983 Method of measurement for responsivity of PIN and avalanche photodiodes 
  Issued on: 1983-08-15   Price(USD): 184.0
SJ 2558-1984 Detail specification for semiconductor light emitting numeric displays, Type SM1~18 
  Issued on: 1984-12-20   Price(USD): 180.0
SJ/T 9560.19-1993 Sealed solid micro-relay--Quality grading standard 
  Issued on: 1993-09-03   Price(USD): 180.0
GB/T 17358-2009 Power consumption measurement and testing in heat treating production 
  Issued on: 2009-3-11   Price(USD): 100.0
SJ 2375-1983 Detail specification for silicon PNP low frequency high voltage high power transistors, Type 3CD267 and 3CD467 
  Issued on: 1983-08-19   Price(USD): 180.0
SJ 1838-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors, Type 3DK29 
  Issued on: 1981-9-10   Price(USD): 104.0
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