| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| SJ 2139-1982 |
Methods of measurement for dynamic impedance of silicon current regulator diodes |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-1-1 |
|
| SJ 2140-1982 |
Methods of measurement for limiting voltage of silicon current regulator diodes |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-1-1 |
|
| SJ 2141-1982 |
Methods of measurement for breakdown voltage of silicon currenet regulator diodes |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-1-1 |
|
| SJ 2142-1982 |
Methods of measurement for current temperature coefficient of silicon current regulator diodes |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-1-1 |
|
| SJ 2148-1982 |
Methods of measurement for dynamic impedance of silicon current regulator transistors |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-1-1 |
|
| SJ 2247-1982 |
Outlines dimension for semiconductor optoelectronic devices |
$300.00 |
via email in 1~3 business day |
valid,,1983-7-1 |
|
| SJ 2271-1983 |
Type 3DG104 silicon NPN epitaxial planar super-high frequency low power triodes |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2272-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG44 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2273-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG81 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2274-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG113 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2275-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG85 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2276-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG114 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2277-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG115 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2278-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG72 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2279-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG123 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2281-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG132 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2282-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG143 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2283-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG144 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2284-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG145 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2285-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG146 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
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