2025-12-23 216.73.216.41
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
SJ 1826-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK100 264.0 via email in 1~3 business day superseded,2016-9-1,1982-5-1
SJ 1805-1981 Detail specification for silicon frequency modulated variable capacitance diodes, Type 2CC126 180.0 via email in 1~3 business day abolished2010-01-20 ,,1982-1-1
SJ 1804-1981 Detail specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404 180.0 via email in 1~3 business day abolished2010-01-20 ,,1982-1-1
SJ 1806-1981 Detail specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130 180.0 via email in 1~3 business day abolished2010-01-20 ,,1982-1-1
SJ 1682-1980 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA151 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1789-1981 Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1692-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD208 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1791-1981 Method of measurement for insulation robustness of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1741-1981 Type series of unsealed electromagnetic relays for use in electonic equipment 2549.0 via email in 1~5 business day abolished2010-01-20 ,,1981-10-1
SJ 1693-1980 Detail specification for silicon PNP low-frequency high power transistors, Type 3AD150 220.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1787-1981 Method of measurement for rated peak working reverse voltage and reverse current of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1686-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD202 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1788-1981 Method of measurement for operational junction temperature of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1689-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD205 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1785-1981 General procedures of measurement for silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1690-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD206 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1786-1981 Method of measurement for forward voltage of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
SJ 1790-1981 Method of measurement for overload current multiplication factor of silicon single phase bridge rectifiers, up to 5A 180.0 via email in 1~3 business day abolished2001-12-17 ,,1981-10-1
SJ 1795-1981 Detail specification for 50-1000mA low current thyristors 120.0 via email in 1~3 business day abolished2010-01-20,,1981-10-1
SJ 1683-1980 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA152 180.0 via email in 1~3 business day abolished2010-01-20 ,,1981-10-1
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SJ 1826-1981 Detail specification for silicon NPN epitaxial planar low power switching transistors,Type 3DK100 
  Issued on: 1981-09-10   Price(USD): 264.0
SJ 1805-1981 Detail specification for silicon frequency modulated variable capacitance diodes, Type 2CC126 
  Issued on: 1981-05-05   Price(USD): 180.0
SJ 1804-1981 Detail specification for silicon tuning variable capacitance diodes, Type 2CC101~104, 2CC201~204, 2CC301~304, 2CC401~404 
  Issued on: 1981-05-05   Price(USD): 180.0
SJ 1806-1981 Detail specification for silicon band switching varialbe capacitance diodes, Type 2CC110, 2CC210, 2CC310, 2CC410, 2CC130 
  Issued on: 1981-05-05   Price(USD): 180.0
SJ 1682-1980 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA151 
  Issued on: 1980-12-29   Price(USD): 180.0
SJ 1789-1981 Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1692-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD208 
  Issued on: 1980-12-29   Price(USD): 180.0
SJ 1791-1981 Method of measurement for insulation robustness of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1741-1981 Type series of unsealed electromagnetic relays for use in electonic equipment 
  Issued on: 1981-10-01   Price(USD): 2549.0
SJ 1693-1980 Detail specification for silicon PNP low-frequency high power transistors, Type 3AD150 
  Issued on: 1980-12-29   Price(USD): 220.0
SJ 1787-1981 Method of measurement for rated peak working reverse voltage and reverse current of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1686-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD202 
  Issued on: 1980-12-29   Price(USD): 180.0
SJ 1788-1981 Method of measurement for operational junction temperature of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1689-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD205 
  Issued on: 1980-12-29   Price(USD): 180.0
SJ 1785-1981 General procedures of measurement for silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1690-1980 Detail specification for silicon NPN low-frequency high power transistors, Type 3DD206 
  Issued on: 1980-12-29   Price(USD): 180.0
SJ 1786-1981 Method of measurement for forward voltage of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1790-1981 Method of measurement for overload current multiplication factor of silicon single phase bridge rectifiers, up to 5A 
  Issued on: 1981-03-27   Price(USD): 180.0
SJ 1795-1981 Detail specification for 50-1000mA low current thyristors 
  Issued on: 1981-03-27   Price(USD): 120.0
SJ 1683-1980 Detail specification for silicon NPN high-frequency high power transistors, Type 3DA152 
  Issued on: 1980-12-29   Price(USD): 180.0
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