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Chinese Standard Classification
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GB/T 45720-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for gate dielectric films
Issued on: 2025-05-30 Price(USD): 375.0 |
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GB/T 45721.1-2025 Semiconductor devices—Stress migration test—Part 1: Copper stress migration test
Issued on: 2025-05-30 Price(USD): 435.0 |
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GB/T 45722-2025 Semiconductor devices—Constant current electromigration test
Issued on: 2025-05-30 Price(USD): 270.0 |
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GB/T 45719-2025 Semiconductor devices—Hot carrier test on metal-oxide semiconductor(MOS) transistors
Issued on: 2025-05-30 Price(USD): 270.0 |
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GB/T 45718-2025 Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers
Issued on: 2025-05-30 Price(USD): 315.0 |
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GB/T 45716-2025 Semiconductor devices—Bias temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs)
Issued on: 2025-05-30 Price(USD): 270.0 |
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T/CEPEA 0101-2023 X-ray real-time imaging detection method for IGBT module welding quality
Issued on: 2024-03-01 Price(USD): 420.0 |
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GB/T 20870.4-2024 Semiconductor devices—Part 16-4:Microwave intergrated circuits—Switches
Issued on: 2024-10-26 Price(USD): 435.0 |
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GB/T 4937.35-2024 Semiconductor devices—Mechanical and climatic test methods—Part 35: Acoustic microscopy for plastic encapsulated electronic components
Issued on: 2024-3-15 Price(USD): 330.0 |
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GB/T 4937.34-2024 Semiconductor devices—Mechanical and climatic test methods—Part 34:Power cycling
Issued on: 2024-3-15 Price(USD): 210.0 |
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T/SLEIA 0003-2024
Issued on: 2024-01-26 Price(USD): |
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T/CIE 145-2022 Measurement method of radiation induced traps by deep level transient spectroscopy
Issued on: 2022-12-31 Price(USD): 225.0 |
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GB/T 20870.5-2023 Semiconductor devices—Part 16-5: Microwave integrated circuits—Oscillators
Issued on: 2023-9-7 Price(USD): 600.0 |
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GB/T 20870.2-2023 Semiconductor devices—Part 16-2: Microwave integrated circuits—Frequency prescalers
Issued on: 2023-9-7 Price(USD): 435.0 |
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GB/T 4937.26-2023 Semiconductor devices—Mechanical and climatic test methods—Part 26: Electrostatic discharge (ESD) sensitivity testing—Human body model(HBM)
Issued on: 2023-9-7 Price(USD): 800.0 |
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T/CIE 119-2021 Test method and procedure of atmospheric-neutron induced single event effects in semiconductor devices
Issued on: 2021-11-22 Price(USD): 225.0 |
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T/CIE 147-2022 Technical specification for evaluation of space TWT accelerated life test
Issued on: Price(USD): 225.0 |
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GB/T 4937.27-2023 Semiconductor devices—Mechanical and climatic test methods—Part 27: Electrostatic discharge(ESD) sensitivity testing—Machine model(MM)
Issued on: 2023-05-23 Price(USD): 255.0 |
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GB/T 4937.23-2023 Semiconductor devices—Mechanical and climatic test methods—Part 23:High temperature operating life
Issued on: 2023-05-23 Price(USD): 255.0 |
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GB/T 4937.32-2023 Semiconductor devices—Mechanical and climatic test methods—Part 32:Flammability of platic-encapsulated devices(externally induced)
Issued on: 2023-05-23 Price(USD): 120.0 |
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