2024-11-22 13.59.111.183
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB 12300-1990 Test methods of safe operating area for power transistors 75.0 via email in 1~3 business day valid,,1990-8-1
GB 9432-1988 Blank detail specification for industrial heating tetrode 60.0 via email in 1~3 business day valid,,1989-2-1
GB/T 16468-1996 Series programmes for static induction transistors 104.0 via email in 1~3 business day valid,,1997-1-1
GB/T 17007-1997 Measuring methods for insulated-gate bipolar transistor 250.0 via email in 1~3 business day abolished2005-10-14,,1998-8-1
GB/T 17008-1997 Terminology and letter symbols for insulated-gate bipolar transistor 180.0 via email in 1~3 business day abolished2005-10-14,,1998-8-1
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification 180.0 via email in 1~3 business day valid,,2007-11-1
GB/T 37660-2019 Technical specification of power electronic devices for high-voltage direct current(HVDC) transmission using voltage sourced converters(VSC) 250.0 via email in 1~3 business day valid,,2020-1-1
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors 1275.0 via email in 1~5 business day valid,,2024-4-1
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification 210.0 via email in 1~3 business day valid,,1999-6-1
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications 180.0 via email in 1~3 business day valid,,1997-1-1
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 210.0 via email in 1~3 business day valid,,1999-6-1
GB/T 6256-1986 Blank detail specification for industrial heating triodes 260.0 via email in 1~3 business day valid,,1987-4-1
GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification 210.0 via email in 1~3 business day valid,,1999-6-1
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification 150.0 via email in 1~3 business day valid,,1997-1-1
SJ/T 11225-2000 Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 160.0 via email in 1~3 business day valid,,2000-10-1
SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 150.0 via email in 1~3 business day valid,,2000-10-1
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 160.0 via email in 1~3 business day valid,,2000-10-1
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GB 12300-1990 Test methods of safe operating area for power transistors 
  Issued on: 1990-03-15   Price(USD): 75.0
GB 9432-1988 Blank detail specification for industrial heating tetrode 
  Issued on: 1988-06-02   Price(USD): 60.0
GB/T 16468-1996 Series programmes for static induction transistors 
  Issued on: 1996-07-09   Price(USD): 104.0
GB/T 17007-1997 Measuring methods for insulated-gate bipolar transistor 
  Issued on: 1997-10-05   Price(USD): 250.0
GB/T 17008-1997 Terminology and letter symbols for insulated-gate bipolar transistor 
  Issued on: 1997-10-05   Price(USD): 180.0
GB/T 21039.1-2007 Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification 
  Issued on: 2007-6-29   Price(USD): 180.0
GB/T 37660-2019 Technical specification of power electronic devices for high-voltage direct current(HVDC) transmission using voltage sourced converters(VSC) 
  Issued on: 2019-06-04   Price(USD): 250.0
GB/T 4587-2023 Semiconductor devices—Discrete devices—Part 7:Bipolar transistors 
  Issued on: 2023-9-7   Price(USD): 1275.0
GB/T 6217-1998 Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification 
  Issued on: 1998-1-1   Price(USD): 210.0
GB/T 6218-1996 Blank detail specification for bipolar transistors for switching applications 
  Issued on: 1996-7-1   Price(USD): 180.0
GB/T 6219-1998 Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz 
  Issued on: 1998-1-1   Price(USD): 210.0
GB/T 6256-1986 Blank detail specification for industrial heating triodes 
  Issued on: 1986-04-01   Price(USD): 260.0
GB/T 7576-1998 devices -Discrete devices - Part 7: Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification 
  Issued on: 1998-1-1   Price(USD): 210.0
GB/T 7577-1996 detail specification for case-rated bipolar transistors for low-frequency amplification 
  Issued on: 1996-7-9   Price(USD): 150.0
SJ/T 11225-2000 Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor 
  Issued on: 2000-08-16   Price(USD): 160.0
SJ/T 11226-2000 Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor 
  Issued on: 2000-8-16   Price(USD): 150.0
SJ/T 11227-2000 Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor 
  Issued on: 2000-8-16   Price(USD): 160.0
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