2023-3-20 3.238.250.73
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials 150.0 via email in 1~3 business day valid,,2010-6-1
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques 180.0 via email in 1~3 business day valid,,2010-6-1
GB/T 14139-2009 Silicon epitaxial wafers 180.0 via email in 1~3 business day abolished2020-05-01,2020-5-1,2010-6-1
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 180.0 via email in 1~3 business day valid,,2010-6-1
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 160.0 via email in 1~3 business day superseded,2021-12-1,2010-6-1
GB/T 14264-1993 Semiconductor materials－Terms and definitions 280.0 via email in 1~3 business day abolished2010-06-01,2010-6-1,1993-1-2
GB/T 14264-2009 Semiconductor materials - Terms and definitions 720.0 via email in 1~3 business day valid,,2010-6-1
GB/T 14844-1993 of semiconductor materials 264.0 via email in 1~3 business day abolished2019-11-01,2019-11-1,1994-9-1
GB/T 14844-2018 Designations of semiconductor materials 160.0 via email in 1~3 business day valid,,2019-11-1
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 180.0 via email in 1~3 business day valid,,2011-10-1
GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 210.0 via email in 1~3 business day abolished2017-12-19,,2014-8-15
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon 360.0 via email in 1~3 business day superseded,2021-12-1,2010-6-1
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 210.0 via email in 1~3 business day valid,,2010-6-1
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques 360.0 via email in 1~3 business day valid,,2010-6-1
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal 150.0 via email in 1~3 business day valid,,2010-6-1
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 150.0 via email in 1 business day valid,,2010-6-1
GB/T 16595-2019 Specification for a universal wafer grid 130.0 via email in 1~3 business day valid,,2020-2-1
GB/T 16596-2019 Specification for establishing a wafer coordinate system 80.0 via email in 1~3 business day valid,,2020-2-1
GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities 210.0 via email in 1~3 business day valid,,2010-6-1
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction 170.0 via email in 1~3 business day valid,,2010-6-1
* Related standard quantity: * Page quantity: * Current: * First Previous Next End



Code of China
Search

GB/T 13387-2009 Test method for measuring flat length wafers of silicon and other electronic materials 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 13388-2009 Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 14139-2009 Silicon epitaxial wafers 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 14141-2009 Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 14146-2009 Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method 
  Issued on: 2009-10-30   Price(USD): 160.0
GB/T 14264-1993 Semiconductor materials－Terms and definitions 
  Issued on: 1993-03-20   Price(USD): 280.0
GB/T 14264-2009 Semiconductor materials - Terms and definitions 
  Issued on: 2009-10-30   Price(USD): 720.0
GB/T 14844-1993 of semiconductor materials 
  Issued on: 1993-1-2   Price(USD): 264.0
GB/T 14844-2018 Designations of semiconductor materials 
  Issued on: 2018-12-28   Price(USD): 160.0
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance 
  Issued on: 2011-1-10   Price(USD): 180.0
GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes 
  Issued on: 2013-12-31   Price(USD): 210.0
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon 
  Issued on: 2009-10-30   Price(USD): 360.0
GB/T 1553-2009 Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 1554-2009 Testing method for crystallographic perfection of silicon by preferential etch techniques 
  Issued on: 2009-10-30   Price(USD): 360.0
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 16595-2019 Specification for a universal wafer grid  
  Issued on: 2019-03-25   Price(USD): 130.0
GB/T 16596-2019 Specification for establishing a wafer coordinate system  
  Issued on: 2019-03-25   Price(USD): 80.0
GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 24576-2009 Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction 
  Issued on: 2009-10-30   Price(USD): 170.0
About Us   |    Contact Us   |    Terms of Service   |    Privacy   |    Cancellation & Refund Policy   |    Payment
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 | Email: coc@codeofchina.com | QQ: 672269886
Copyright: Foryou Tech Co., Ltd. 2008-2040