2024-11-22 3.12.146.100
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB 10271-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG162 410.0 via email in 1~3 business day superseded,,
GB 10272-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG182 410.0 via email in 1~3 business day superseded,,
GB 10273-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140 160.0 via email in 1~3 business day valid,,1989-8-1
GB 10279-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG3130 410.0 via email in 1~3 business day superseded,,
GB 4587-1984 Measuring methods for bipolar transistors 1270.0 via email in 1~8 business day superseded,1995-8-1,1985-5-1
GB 6353-1986 Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79 240.0 via email in 1~3 business day superseded,,1987-1-1
GB 6354-1986 Glass passivated high voltage rectifier silicon stack for types 2CL24, 2CL25, 2CL27 and 2CL29 450.0 via email in 1~3 business day superseded,,1987-1-1
GB 6355-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CG21B, 3CG21C 160.0 via email in 1~3 business day superseded,,1986-12-1
GB 6356-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C 190.0 via email in 1~3 business day superseded,,1986-12-1
GB 6357-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201C 180.0 via email in 1~3 business day superseded,,1986-12-1
GB 7147-1987 Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80 180.0 via email in 1~3 business day superseded,,1987-9-1
GB 7148-1987 Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116 250.0 via email in 1~3 business day superseded,,1987-9-1
GB 7149-1987 Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105B 180.0 via email in 1~3 business day superseded,,1987-9-1
GB 7150-1987 Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107B 180.0 via email in 1~3 business day valid,,1987-9-1
GB 7151-1987 Detail specification for electronic components--Ambient-rated bipolar transistors for high-frequency amplification type 3DG131A, 3DG131B, 3DG131C 160.0 via email in 1~3 business day valid,,1987-9-1
GB 7576-1987 Blank detail specification for case -rated bipolar transistors for high--frequncy amplification (Applicable for certification) 210.0 via email in 1~3 business day superseded,1999-6-1,1987-11-1
GB 7577-1987 Blank detail specification for case-rated bipolar transistors for low-frequency amplification 180.0 via email in 1~3 business day superseded,1997-1-1,1987-11-1
GB 7578-1987 Detail specification for electronic component--Case-rated bipolar transistor for types 3DA150B, 3DA150C for high-frequency amplification 160.0 via email in 1~3 business day superseded,,1987-11-1
GB 7579-1987 Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification 130.0 via email in 1~3 business day superseded,,1987-11-1
GB 7580-1987 Detail specification for electronic components--Case-rated bipolar transistors for low-frequency amplification, type 3DD102B 160.0 via email in 1~3 business day superseded,,1987-11-1
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GB 10271-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG162 
  Issued on:   Price(USD): 410.0
GB 10272-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG182 
  Issued on:   Price(USD): 410.0
GB 10273-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG140 
  Issued on:   Price(USD): 160.0
GB 10279-1988 Detail specification for electronic component--Bipolar transistor for ambient-rated high-frequency amplification of type 3DG3130 
  Issued on:   Price(USD): 410.0
GB 4587-1984 Measuring methods for bipolar transistors 
  Issued on:   Price(USD): 1270.0
GB 6353-1986 Detail specification for electronic component--Forward AGC low-noise transistor for high-frequency amplification--Type 3 DG79 
  Issued on:   Price(USD): 240.0
GB 6354-1986 Glass passivated high voltage rectifier silicon stack for types 2CL24, 2CL25, 2CL27 and 2CL29 
  Issued on:   Price(USD): 450.0
GB 6355-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CG21B, 3CG21C 
  Issued on:   Price(USD): 160.0
GB 6356-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3CX201A, 3CX201B, 3CX201C 
  Issued on:   Price(USD): 190.0
GB 6357-1986 Detail specification for electronic component--Ambient-rated bipolar transistors for low and high-frequency amplification type 3DX201A, 3DX201B, 3DX201C 
  Issued on:   Price(USD): 180.0
GB 7147-1987 Detail specification for electronic components--Ambint-rated bipolar transistors for high frequency amplification type 3DG80 
  Issued on:   Price(USD): 180.0
GB 7148-1987 Detail specification for electronic components--Single-gate junction type field-effect transistors of types CS111, CS112, CS113, CS114, CS115, CS116 
  Issued on: 1987-01-07   Price(USD): 250.0
GB 7149-1987 Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK105A, 3DK105B 
  Issued on:   Price(USD): 180.0
GB 7150-1987 Detail specification for electronic components--Bipolar transistors for switching amplification types 3DK107A, 3DK107B 
  Issued on:   Price(USD): 180.0
GB 7151-1987 Detail specification for electronic components--Ambient-rated bipolar transistors for high-frequency amplification type 3DG131A, 3DG131B, 3DG131C 
  Issued on:   Price(USD): 160.0
GB 7576-1987 Blank detail specification for case -rated bipolar transistors for high--frequncy amplification (Applicable for certification) 
  Issued on:   Price(USD): 210.0
GB 7577-1987 Blank detail specification for case-rated bipolar transistors for low-frequency amplification 
  Issued on:   Price(USD): 180.0
GB 7578-1987 Detail specification for electronic component--Case-rated bipolar transistor for types 3DA150B, 3DA150C for high-frequency amplification 
  Issued on: 1987-03-27   Price(USD): 160.0
GB 7579-1987 Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification 
  Issued on:   Price(USD): 130.0
GB 7580-1987 Detail specification for electronic components--Case-rated bipolar transistors for low-frequency amplification, type 3DD102B 
  Issued on:   Price(USD): 160.0
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