2024-11-22 3.145.105.149
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB 10274-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS119 410.0 via email in 1~3 business day superseded,,
GB 10275-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1191 340.0 via email in 1~3 business day superseded,,1989-8-1
GB 10276-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS142 180.0 via email in 1~3 business day superseded,,1989-8-1
GB 10277-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1421 180.0 via email in 1~3 business day superseded,,1989-8-1
GB 10278-1988 Detail specification for electronic component N-channel single-gate junction type field-effect transistor of type CS422OA 130.0 via email in 1~3 business day superseded,,1989-8-1
GB 4586-1984 Measuring methods for field-effect transistors 360.0 via email in 1~5 business day superseded,1995-8-1,1985-5-1
GB 6217-1986 Blank detail specfication for ambient-Rated bipolar transistors for low and high frequency amplification (Applicable for certification) 165.0 via email in 1~3 business day superseded,1999-6-1,1987-1-1
GB 6218-1986 Blank detail specification for bipolar transistors for switching applications 410.0 via email in 1~3 business day superseded,1997-1-1,
GB 6219-1986 Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz (Applicable for certification) 225.0 via email in 1~3 business day superseded,1999-6-1,1987-1-1
GB 9501-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS122 160.0 via email in 1~3 business day valid,,1988-12-1
GB 9502-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS103 410.0 via email in 1~3 business day superseded,,
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application 300.0 via email in 1~3 business day valid,,1995-8-1
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors 220.0 via email in 1~3 business day abolished2005-10-14,,1995-8-1
GB/T 16468-1996 Series programmes for static induction transistors 104.0 via email in 1~3 business day valid,,1997-1-1
QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET) 165.0 via email in 1~3 business day valid,,1994-10-1
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GB 10274-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS119 
  Issued on:   Price(USD): 410.0
GB 10275-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1191 
  Issued on:   Price(USD): 340.0
GB 10276-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS142 
  Issued on:   Price(USD): 180.0
GB 10277-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1421 
  Issued on:   Price(USD): 180.0
GB 10278-1988 Detail specification for electronic component N-channel single-gate junction type field-effect transistor of type CS422OA 
  Issued on:   Price(USD): 130.0
GB 4586-1984 Measuring methods for field-effect transistors 
  Issued on:   Price(USD): 360.0
GB 6217-1986 Blank detail specfication for ambient-Rated bipolar transistors for low and high frequency amplification (Applicable for certification) 
  Issued on:   Price(USD): 165.0
GB 6218-1986 Blank detail specification for bipolar transistors for switching applications 
  Issued on:   Price(USD): 410.0
GB 6219-1986 Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz (Applicable for certification) 
  Issued on:   Price(USD): 225.0
GB 9501-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS122 
  Issued on:   Price(USD): 160.0
GB 9502-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS103 
  Issued on:   Price(USD): 410.0
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application 
  Issued on: 1995-01-05   Price(USD): 300.0
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors 
  Issued on: 1995-01-05   Price(USD): 220.0
GB/T 16468-1996 Series programmes for static induction transistors 
  Issued on: 1996-07-09   Price(USD): 104.0
QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET) 
  Issued on: 1994-03-26   Price(USD): 165.0
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