| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| GB 10274-1988 |
Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS119 |
$410.00 |
via email in 1~3 business day |
superseded,1997-1-1, |
|
| GB 10275-1988 |
Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1191 |
$340.00 |
via email in 1~3 business day |
superseded,1997-1-1,1989-8-1 |
|
| GB 10276-1988 |
Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS142 |
$180.00 |
via email in 1~3 business day |
superseded,1997-1-1,1989-8-1 |
|
| GB 10277-1988 |
Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS1421 |
$180.00 |
via email in 1~3 business day |
superseded,1997-1-1,1989-8-1 |
|
| GB 10278-1988 |
Detail specification for electronic component N-channel single-gate junction type field-effect transistor of type CS422OA |
$130.00 |
via email in 1~3 business day |
superseded,1997-1-1,1989-8-1 |
|
| GB 4586-1984 |
Measuring methods for field-effect transistors |
$360.00 |
via email in 1~5 business day |
superseded,1995-8-1,1985-5-1 |
|
| GB 6217-1986 |
Blank detail specfication for ambient-Rated bipolar transistors for low and high frequency amplification (Applicable for certification) |
$165.00 |
via email in 1~3 business day |
superseded,1999-6-1,1987-1-1 |
|
| GB 6218-1986 |
Blank detail specification for bipolar transistors for switching applications |
$410.00 |
via email in 1~3 business day |
superseded,1997-1-1, |
|
| GB 6219-1986 |
Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz (Applicable for certification) |
$225.00 |
via email in 1~3 business day |
superseded,1999-6-1,1987-1-1 |
|
| GB 9501-1988 |
Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS122 |
$160.00 |
via email in 1~3 business day |
superseded,1997-1-1,1988-12-1 |
|
| GB 9502-1988 |
Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS103 |
$410.00 |
via email in 1~3 business day |
superseded,1997-1-1, |
|
| GB/T 15449-1995 |
Blank detail-specification for field-effect transistors for case-rated swatching application |
$300.00 |
via email in 1~3 business day |
valid,,1995-8-1 |
|
| GB/T 15450-1995 |
Blank detail specification for silicon dual-qute field-effect transistors |
$220.00 |
via email in 1~3 business day |
abolished2005-10-14,,1995-8-1 |
|
| GB/T 16468-1996 |
Series programmes for static induction transistors |
$104.00 |
via email in 1~3 business day |
valid,,1997-1-1 |
|
| QJ 2617-1994 |
Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET) |
$165.00 |
via email in 1~3 business day |
valid,,1994-10-1 |
|
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