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DB31/ 652-2012 The norm of energy consumption per unit information flow of communications industry(The part of mobile communications macro base station and data center)
Issued on: 2012-10-19 Price(USD): 165.0 |
DB31/ 653-2012
Issued on: 2012-10-19 Price(USD): 165.0 |
SJ 1553-1980 General specification for negative temperature coefficient thermistors for temperature measurement
Issued on: 1980-02-04 Price(USD): 544.0 |
SJ 1557-1980 General specification for indirectly heated temperature coefficient themistors
Issued on: 1980-02-04 Price(USD): 180.0 |
SJ 2028-1982 Generic specification for directly heated positive temperature coefficient thermistors
Issued on: 1982-01-30 Price(USD): 180.0 |
SJ 2028.1-1983 Directly heated positive temperature coefficient thermistors used for temperature compensation for Type MZ11
Issued on: 1983-02-24 Price(USD): 90.0 |
SJ 2028.2-1983 Positive temperature coefficient thermistors used for temperature control for Type MZ61
Issued on: 1983-02-24 Price(USD): 120.0 |
SJ 2214.1-1982 General procedures of measurement for semiconductor photodiodes and phototransistors
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.10-1982 Method of measurement for light current of semiconductor photodiodes and phototransistors
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.2-1982 Method of measurement for forward voltage of semiconductor photodiodes
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.3-1982 Method of measurement for dark current of semiconductor photodiodes
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.4-1982 Method of measurement for reverse break-down voltage of semiconductor photodiodes
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.5-1982 Method of measurement for junction capacitance of semiconductor photodiodes
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.6-1982 Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.7-1982 Method of measurement for saturation voltage of semiconductor phototransistors
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.8-1982 Method of measurement for dark current voltage of semiconductor phototransistors
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2214.9-1982 Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2215.1-1982 General procedures of measurement for semiconductor photocouplers
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2215.10-1982 Method of measurement for direct current transfer ratio of semiconductor photocouplers
Issued on: 1982-11-30 Price(USD): 184.0 |
SJ 2215.11-1982 Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplers
Issued on: 1982-11-30 Price(USD): 184.0 |
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