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International Standard List: Semiconducting materials

Title Standard No. Implemented On
Gallium arsenide single crystal and cutting wafer grown by horizontal bridgman methodGB/T 11094-20202021-8-1
Silicon epitaxial wafersGB/T 14139-20192020-5-1
Casting multicrystalline silicon brick for photovoltaic solar cellGB/T 29054-20192020-5-1
Multicrystalline silicon wafers for photovoltaic solar cellGB/T 29055-20192020-5-1
Monocrystalline germanium and monocrystalline germanium slicesGB/T 5238-20192020-5-1
Specification for establishing a wafer coordinate system GB/T 16596-20192020-2-1
Specification for a universal wafer grid GB/T 16595-20192020-2-1
Designations of semiconductor materialsGB/T 14844-20182019-11-1
General specification for epitaxial wafers and substrates based on gallium nitrideGB/T 37053-20182019-7-9
Collection of metallographs on defects of germanium crystalGB/T 8756-20182019-7-1
Monocrystalline silicon as cut wafers and lapped wafersGB/T 12965-20182019-6-1
Monocrystalline silicon for solar cellGB/T 25076-20182019-6-1
Polycrystalline indium phosphideGB/T 36706-20182019-6-1
Monocrystalline silicon polished wafersGB/T 12964-20182019-6-1
Monocrystalline silicon wafers for solar cellsGB/T 26071-20182019-4-1
Monocrystalline gallium arsenide polished wafers for solar cellGB/T 35305-20172018-7-1
Specification for alphanumeric marking of silicon wafersGB/T 34479-20172018-7-1
Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cellGB/T 35308-20172018-7-1
Granular polysilicon produced by fluidized bed methodGB/T 35307-20172018-7-1
200 mm silicon epitaxial waferGB/T 35310-20172018-7-1
Solar-grade polycrystalline siliconGB/T 25074-20172018-5-1
Monocrystalline siliconGB/T 12962-20152017-1-1
pecification for order entry format of silicon wafersGB/T 32279-20152017-1-1
Silicon powder―Determination of total carbon content―Infrared absorption method after combustion in an induction furnaceGB/T 32573-20162016-11-1
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometryGB/T 31854-20152016-3-1
Requirements for solder paste for high-quality interconnections in electronics assemblyGB/T 31475-20152016-1-1
Soldering fluxes for high-quality interconnections in electronics assemblyGB/T 31474-20152016-1-1
Silicon core for polysilicon by improved siemens methodYS/T 1061-20152015-10-1
High pure germanium tetrachlorideYS/T 13-20152015-10-1
Standard specification for fine aluminum-1% silicon wire for semiconductor lead-bondingYS/T 543-20152015-10-1
Electronic-grade polycrystalline siliconGB/T 12963-20142015-9-1
Polished monocrystalline silicon carbide wafersGB/T 30656-20142015-9-1
Practice for conversion between resistivity and dopant density for boron-doped,phosphorus-doped,and arsenic-doped siliconGB/T 13389-20142015-9-1
Silicon metalGB/T 2881-20142015-8-1
Polished reclaimed silicon wafersYS/T 985-20142015-4-1
Gallium nitride based epitaxial layer for LED lightingGB/T 30854-20142015-4-1
High purity gallium oxideYS/T 979-20142015-4-1
Germanium substrate for solar cellGB/T 30861-20142015-4-1
Carbon/carbon composites guide shield of single crystal furnaceYS/T 978-20142015-4-1
Germanium grainYS/T 989-20142015-4-1
Carbon/carbon U shape heating element of hydrogenation furnaceYS/T 982-20142015-4-1
GaP substrates for LED epitaxial chipsGB/T 30855-20142015-4-1
Carboxyethyl-germanium sesquioxideYS/T 988-20142015-4-1
Specification for serial alphanumeric marking of the front surface of wafersYS/T 986-20142015-4-1
GaAs substrates for LED epitaxial chipsGB/T 30856-20142015-4-1
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafersGB/T 30867-20142015-2-1
GB/T 30868-2014GB/T 30868-20142015-2-1
Metallographs Collection for Original Defects of Crystalline SiliconGB/T 30453-20132014-10-1
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodesGB/T 14863-20132014-8-15
Test method for measuring compensation degree of silicon materials used for photovoltaic applicationsGB/T 29850-20132014-4-15
Test Method for Measuring Phosphorus, Arsenic and Antimony in Silicon Materials Used for Photovoltaic Applications by Secondary Ion Mass SpectrometryGB/T 29852-20132014-4-15
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometryGB/T 29849-20132014-4-15
Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometryGB/T 29851-20132014-4-15
300 mm polished monocrystalline silicon wafersGB/T 29506-20132014-2-1
Test method for measuring surface roughness on planar surfaces of silicon waferGB/T 29505-20132014-2-1
300 mm monocrystalline silicon as cut slices and grinded slicesGB/T 29508-20132014-2-1
300 mm monocrystalline siliconGB/T 29504-20132014-2-1
Multi-crystalline silicon wafer for solar cellGB/T 29055-20122013-10-1
Solar-grade casting multi-crystalline silicon brickGB/T 29054-20122013-10-1
Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopyGB/T 29057-20122013-10-1
Carbon-carbon composites crucible used in single crystal furnaceYS/T 792-20122013-3-1
Cadmium TellurideYS/T 838-20122013-3-1
High-purity arsenicYS/T 43-20112012-7-1
Specification for silicon annealed wafersGB/T 26069-20102011-10-1
Germanium single crystal for solar cellGB/T 26072-20102011-10-1
Standard test method for dimensions of notches on silicon wafersGB/T 26067-20102011-10-1
Mono-crystalline silicon as cut slices for photovoltaic solar cellsGB/T 26071-20102011-10-1
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectanceGB/T 26068-20102011-10-1
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectanceGB/T 14847-20102011-10-1
Practice for shallow etch pit detection on siliconGB/T 26066-20102011-10-1
Monocrystalline silicon of solar cellGB/T 25076-20102011-4-1
Gallium arsenide single crystal for solar cellGB/T 25075-20102011-4-1
Solar-grade polycrystalline siliconGB/T 25074-20102011-4-1
Test method for measuring resistivity of silicon wafer using spreading resistance probeGB/T 6617-20092010-6-1
Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometryGB/T 24580-20092010-6-1
Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impuritiesGB/T 24581-20092010-6-1
Test method for measuring diameter of semiconductor waferGB/T 14140-20092010-6-1
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decayGB/T 1553-20092010-6-1
Metallurgical silicon powderYS/T 724-20092010-6-1
Test methods for bow of silicon wafersGB/T 6619-20092010-6-1
Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosionGB/T 4061-20092010-6-1
Test method for thickness and total thickness variation of silicon slicesGB/T 6618-20092010-6-1
Testing methods for surface flatness of silicon slicesGB/T 6621-20092010-6-1
Test method for measuring resistivity of monocrystal siliconGB/T 1551-20092010-6-1
Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatographyGB/T 24577-20092010-6-1
Test method for detection of oxidation induced defects in polished silicon wafersGB/T 4058-20092010-6-1
Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniquesGB/T 13388-20092010-6-1
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopyGB/T 24579-20092010-6-1
Test method for measuring warp on silicon slices by noncontact scanningGB/T 6620-20092010-6-1
Testing method for crystallographic perfection of silicon by preferential etch techniquesGB/T 1554-20092010-6-1
Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe arrayGB/T 14141-20092010-6-1
Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impuritiesGB/T 24574-20092010-6-1
Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopyGB/T 24578-20092010-6-1
Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffractionGB/T 24576-20092010-6-1
Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance methodGB/T 14146-20092010-6-1
Test method for substitutional atomic carbon concent of silicon by infrared absorptionGB/T 1558-20092010-6-1
Indium antimonide polycrystal,single crystals and as-cut slicesGB/T 11072-20092010-6-1
Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gaugeGB/T 6616-20092010-6-1
Silicon epitaxial wafersGB/T 14139-20092010-6-1
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometryGB/T 24582-20092010-6-1
Semiconductor materials - Terms and definitionsGB/T 14264-20092010-6-1
Specification for Polycrystalline SiliconGB/T 12963-20092010-6-1
Testing methods for determining the orientation of a semiconductor single crystalGB/T 1555-20092010-6-1
Test method for measuring flat length wafers of silicon and other electronic materialsGB/T 13387-20092010-6-1
The sapphire substrates for nitride based light-emitting diodeSJ/T 11396-20092010-1-1
Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltageYS/T 679-20082008-9-1
Silicon metalGB/T 2881-20082008-9-1
Selenium dioxideYS/T 651-20072008-5-1
Horizontal bridgman grown gallium arsenide single crystal and cutting waferGB/T 11094-20072008-2-1
Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slicesGB/T 11093-20072008-2-1
Fine aluminum-1% silicon wire for semiconductor lend-bondingYS/T 543-20062006-10-11
Indium phosphide single crystalGB/T 20230-20062006-10-1
Gallium arsenide single crystalGB/T 20228-20062006-10-1
Gallium phosphide single crystalGB/T 20229-20062006-10-1
Monocrystalline silicon as cut slices and lapped slicesGB/T 12965-20052006-4-1
Monoccrystalline siliconGB/T 12962-20052006-4-1
ArsenicYS 68-20042004-11-1
Specification for cross-pressing molybdenum-rhenium alloy piecesSJ 20866-20032004-3-1
Monocrystalline silicon polished wafersGB/T 12964-20032004-1-1
Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption methodGB/T 19199-20032004-1-1
Fine aluminum-1% silicon wire for semiconductor lend-bondingGB/T 8646-19981999-2-1
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflectionGB/T 17169-19971998-8-1
Test methods for determining the orientation of a semiconductor single crystalGB/T 1555-19971998-8-1
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption methodGB/T 17170-19971998-8-1
Test method for substitutional atomic carbon content of silicon by infrared absorptionGB/T 1558-19971998-8-1
Arsenic trioxideYS/T 99-19971998-5-1
Monocrystalline silicon as cut slices and lapped slicesGB/T 12965-19961997-4-1
Monocrystalline siliconGB/T 12962-19961997-4-1
Specification for a universal wafer gridGB/T 16595-19961997-4-1
Specification for establishing a wafer coordinate systemGB/T 16596-19961997-4-1
Polycrystalline siliconGB/T 12963-19961997-4-1
Monocrystalline silicon polished wafersGB/T 12964-19961997-4-1
SeleniumYS/T 223-19961996-12-1
Tellurium ingotsYS/T 222-19961993-3-1
ThalliumYS/T 224-19941993-3-1
Thickness determination for silicon epitaxial layers - Stacking fault methodYS/T 23-19921993-1-1
Test method for silicon wafer edgeYS/T 26-19921993-1-1
Silicon wafer packagingYS/T 28-19921993-1-1
Test method for defects of extended nailsYS/T 24-19921993-1-1
Thcikness determination for silicon epitaxial layer and difussion layer - Angle lap-stain methodYS/T 15-19911992-6-1
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