Standard No.:	GB/T 47097-2026
English Name:	Polished monocrystalline aluminum nitride wafers
Chinese Name:	氮化铝单晶抛光片
Chinese Classification:	H83    Compound semiconductor material
Professional Classification:	GB    National Standard
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	SAMR, SAC
Issued on:	2026-01-28
Implemented on:	2026-8-1
Status:	to be valid
Target Language:	English
File Format:	PDF
Word Count:	9000 words
Translation Price(USD):	270.0
Delivery:	via email in 1~3 business day

GB/T 47097-2026 Polished monocrystalline aluminum nitride wafers English, Anglais, Englisch, Inglés, えいご This is a draft translation for reference among interesting stakeholders. The finalized translation (passing through draft translation, self-check, revision and verification) will be delivered upon being ordered. ICS 13.220.10 CCS H 57 National Standard of the People's Republic of China ‌GB/T 47097-2026 Polished monocrystalline aluminum nitride wafers 氮化铝单晶抛光片 Issue date: 2026-01-28 Implementation date: 2027-02-01 Issued by the General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China the Standardization Administration of the People's Republic of China Contents Foreword 1 Scope 2 Normative References 3 Terms and Definitions 4 Classification and Designation 5 Technical Requirements 6 Test Methods 7 Inspection Rules 8 Marking, Packaging, Transportation, Storage, and Accompanying Documents 9 Order Form Content Annex A (Normative) Test Method for Dislocation Density of Aluminum Nitride Single Crystal Bibliography Aluminum Nitride Single Crystal Polished Wafers 1 Scope This document specifies the designation and classification, technical requirements, inspection rules, marking, packaging, transportation, storage, accompanying documents, and order form content for aluminum nitride single crystal polished wafers (hereinafter referred to as "polished wafers"), and describes the corresponding test methods. This document applies to the production, inspection, and quality evaluation of polished wafers with diameters of 25.4 mm and 50.8 mm for microwave power device applications. 2 Normative References The following documents contain provisions which, through normative reference in this text, constitute essential provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition (including any amendments) applies. GB/T 1555 Test method for determining the orientation of a semiconductor single crystal GB/T 6624 Visual inspection method for surface quality of silicon polished wafers GB/T 13387 Test method for measuring flat length of silicon and other electronic materials wafers GB/T 13388 Test method for measuring crystallographic orientation of flats on silicon wafers by X-ray diffraction GB/T 14140 Test method for measuring diameter of semiconductor wafers GB/T 14264 Terminology of semiconductor materials GB/T 25915.1—2021 Cleanrooms and associated controlled environments — Part 1: Classification of air cleanliness by particle concentration GB/T 32188 Test method for X-ray double crystal rocking curve half-height width of aluminum nitride single crystal substrate GB/T 32189 Test method for surface roughness of aluminum nitride single crystal substrate by atomic force microscopy GB/T 32278 Test method for thickness and total thickness variation of silicon carbide single crystal wafers 3 Terms and Definitions For the purposes of this document, the terms and definitions given in GB/T 14264 and the following apply. 3.1 aluminum nitride single crystal A single crystal semiconductor material composed of aluminum (Al) and nitrogen (N). 3.2 Al facet of single crystal aluminum nitride The Al-polar (0001) crystallographic plane of an aluminum nitride single crystal (3.1). 3.3 N facet of single crystal aluminum nitride The N-polar (0001) crystallographic plane of an aluminum nitride single crystal (3.1). 4 Classification and Designation 4.1 Classification Polished wafers are classified into industrial grade (P-grade) and research grade (R-grade) as required. 4.2 Designation The designation format for polished wafers is PVT AIN-DC-L, where each letter represents the following meaning: PVT AIN — Aluminum nitride prepared by physical vapor transport D — Diameter (1: 25.4 mm; 2: 50.8 mm) C — (0001) crystallographic plane L — Grade (P: industrial grade; R: research grade) Example: PVT AIN-1C-P indicates that the polished wafer is an industrial grade product, with a diameter of 25.4 mm, prepared by physical vapor transport, and oriented to the (0001) crystallographic plane. 5 Technical Requirements 5.1 Surface Quality 5.1.1 The nominal edge exclusion zone for polished wafers is shown in Table 1. Table 1 Nominal Edge Exclusion Zone 5.2 Crystal Orientation and Orientation Tolerance 5.2.1 Surface Crystal Orientation and Orientation Tolerance The surface crystal orientation of the polished wafer is [0001], with an orientation tolerance of ±1∘±1∘ in any direction from the surface orientation. 5.2.2 Crystal Orientation and Orientation Tolerance of Reference Flats The crystal orientation of the primary reference flat (A) of the polished wafer is [101‾0][1010], with an orientation tolerance of 0∘±5.0∘0∘±5.0∘. The crystal orientation of the secondary reference flat (B) of the polished wafer is oriented 90∘90∘ clockwise from the primary reference flat A, with an orientation tolerance of 0∘±5.0∘0∘±5.0∘. 5.3 Geometric Dimensions The geometric dimensions of the polished wafer are shown in Figure 1. If the length of the primary reference flat (A) is greater than the length of the secondary reference flat (B), the front surface is the Al face. The geometric dimension parameters of the aluminum nitride single crystal polished wafer shall meet the requirements of Table 3.