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| Chinese National Standard Category: Semiconductor discrete devices in general |
| English Title: | Semiconductor devices—Time dependent dielectric breakdown (TDDB) test for inter-metal layers |
| Chinese Title: | 半导体器件 内部金属层间的时间相关介电击穿（TDDB）试验 |
| Standard No.: | GB/T 45718-2025 |
| Category No.: | L40 |
| Issued by: | SAMR; SAC |
| Issued on: | 2025-05-30 |
| Implemented on: | 2025-9-1 |
| Status: | valid |
| Superseded by: | |
| Superseded on: | |
| Abolished on: | |
| Superseding: | |
| Word Count: | 10500 words |
| Similar Standards: |
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