2025-12-23 216.73.216.41
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 2596-1981 Tungsten powder and tungsten carbide powder; Determination of specific surface product(average graininess) ; Simplified nitrogen absorption method 100.0 via email in 1~3 business day abolished2005-10-14,,1982-3-1
GB 1555-1979 Determination method for the orientation of a silicon single crystal 30.0 via email in 1~3 business day superseded,1998-8-1,1980-1-1
GB 1550-1979 Testing methods for conductivity type of monocrystalline silicon 180.0 via email in 1~3 business day superseded,1997-1-2,1980-1-1
GB 1551-1979 Test method for resistivity of silicon bars using a two-point probe 30.0 via email in 1~3 business day superseded,1995-1-2,1980-1-1
GB 1553-1979 Measurement of monocrystalline silicon lifetime by D. C photoconductive decay methods 300.0 via email in 1~3 business day superseded,1997-1-2,1980-1-1
GB 1556-1979 Determination method for the the orientation of X-ray diffraction of silicon single crystal 30.0 via email in 1~3 business day superseded,1998-8-1,1980-1-1
GB 1423-1978 Method of measurement of density for precious metals and their alloys 30.0 via email in 1~3 business day superseded,1997-4-1,1979-7-1
GB 1425-1978 Test method for measuring melting point of noble metal eutectic alloy by thermal analysis 180.0 via email in 1~3 business day superseded,1997-4-1,1979-7-1
GB 1424-1978 Precious metals and their alloys--Determination of resistivity 184.0 via email in 1~3 business day superseded,1997-4-1,1979-7-1
GB 351-1964 Test method for resistance coefficient of steel wire 15.0 via email in 1~3 business day superseded,1995-1-2,1965-7-1
GB 1552-1979 Measurement of resistivity for monocrystalline silicon with D-C four point probe 184.0 via email in 1~3 business day superseded,1995-1-2,
GB 5251-1985 Germanium monocrystal--Examination of resistivity--DC linear four-point probe 180.0 via email in 1~3 business day superseded,1995-1-2,
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GB/T 2596-1981 Tungsten powder and tungsten carbide powder; Determination of specific surface product(average graininess) ; Simplified nitrogen absorption method 
  Issued on: 1981-06-07   Price(USD): 100.0
GB 1555-1979 Determination method for the orientation of a silicon single crystal 
  Issued on:   Price(USD): 30.0
GB 1550-1979 Testing methods for conductivity type of monocrystalline silicon 
  Issued on:   Price(USD): 180.0
GB 1551-1979 Test method for resistivity of silicon bars using a two-point probe 
  Issued on:   Price(USD): 30.0
GB 1553-1979 Measurement of monocrystalline silicon lifetime by D. C photoconductive decay methods 
  Issued on:   Price(USD): 300.0
GB 1556-1979 Determination method for the the orientation of X-ray diffraction of silicon single crystal 
  Issued on:   Price(USD): 30.0
GB 1423-1978 Method of measurement of density for precious metals and their alloys 
  Issued on:   Price(USD): 30.0
GB 1425-1978 Test method for measuring melting point of noble metal eutectic alloy by thermal analysis 
  Issued on:   Price(USD): 180.0
GB 1424-1978 Precious metals and their alloys--Determination of resistivity 
  Issued on:   Price(USD): 184.0
GB 351-1964 Test method for resistance coefficient of steel wire 
  Issued on:   Price(USD): 15.0
GB 1552-1979 Measurement of resistivity for monocrystalline silicon with D-C four point probe 
  Issued on:   Price(USD): 184.0
GB 5251-1985 Germanium monocrystal--Examination of resistivity--DC linear four-point probe 
  Issued on:   Price(USD): 180.0
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