| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| GB/T 16596-1996 |
Specification for establishing a wafer coordinate system |
$75.00 |
via email in 1~3 business day |
superseded,2020-2-1,1997-4-1 |
|
| GB/T 16596-2019 |
Specification for establishing a wafer coordinate system |
$80.00 |
via email in 1~3 business day |
valid,,2020-2-1 |
|
| GB/T 17169-1997 |
Test method for the surface quality of polished silicon wafers and epitaxial wafers by optical-reflection |
$380.00 |
via email in 1~3 business day |
abolished2005-10-14,,1998-8-1 |
|
| GB/T 17170-1997 |
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method |
$90.00 |
via email in 1~3 business day |
superseded,2016-7-1,1998-8-1 |
|
| GB/T 19199-2003 |
Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption method |
$90.00 |
via email in 1~3 business day |
superseded,2016-7-1,2004-1-1 |
|
| GB/T 20228-2006 |
Gallium arsenide single crystal |
$124.00 |
via email in 1~3 business day |
abolished2021-12-01 ,2021-12-1,2006-10-1 |
|
| GB/T 20228-2021 |
Gallium arsenide single crystal |
$170.00 |
via email in 1~3 business day |
valid,,2021-12-1 |
|
| GB/T 20229-2006 |
Gallium phosphide single crystal |
$124.00 |
via email in 1~3 business day |
abolished2022-10-01,2022-10-1,2006-10-1 |
|
| GB/T 20229-2022 |
Gallium phosphide single crystal |
$200.00 |
via email in 1~3 business day |
valid,,2022-10-1 |
|
| GB/T 20230-2006 |
Indium phosphide single crystal |
$140.00 |
via email in 1~3 business day |
abolished2022-10-01,2022-10-1,2006-10-1 |
|
| GB/T 20230-2022 |
Indium phosphide single crystal |
$255.00 |
via email in 1~3 business day |
valid,,2022-10-1 |
|
| GB/T 24574-2009 |
Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities |
$210.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 24576-2009 |
Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction |
$170.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 24577-2009 |
Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography |
$210.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 24578-2009 |
Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy |
$210.00 |
via email in 1~3 business day |
superseded,2017-1-1,2010-6-1 |
|
| GB/T 24579-2009 |
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy |
$210.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 24580-2009 |
Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry |
$180.00 |
via email in 1~3 business day |
valid,,2010-6-1 |
|
| GB/T 24581-2009 |
Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities |
$170.00 |
via email in 1~3 business day |
superseded,2022-10-1,2010-6-1 |
|
| GB/T 24582-2009 |
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry |
$120.00 |
via email in 1~3 business day |
superseded,2024-3-1,2010-6-1 |
|
| GB/T 25074-2010 |
Solar-grade polycrystalline silicon |
$120.00 |
via email in 1~3 business day |
superseded,2018-5-1,2011-4-1 |
|
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