2025-12-23 216.73.216.41
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
SJ/T 10961-1996 Detailed specifications for electronic components - 3CG778 silicon PNP ambient-rated transistors for high frequency amplification (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10993-1996 Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification) 380.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 11052-1996 Detailed specifications for electronic components - 3DG162 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10992-1996 Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification) 380.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10966-1996 Detailed specifications for electronic components - 3DD100C silicon NPN case-rated transistors for low frequency amplification (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10967-1996 Detailed specifications for electronic components - 3DD203 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification) 380.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10779-1996 Detailed specifications for electronic components - 2CN41 silicon fast-switching rectifier diodes - Assessment level E (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10771-1996 Detailed specifications for electronic components - 3DG111B (111C, 111E and 111F) ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 490.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10957-1996 Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 11054-1996 Detailed specifications for electronic components - 3DG140 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 450.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10950-1996 Detailed specifications for electronic components - 2CZ322 ambient-rated silicon rectifier diodes (Applicable for certification) 300.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10834-1996 Detailed specifications for electronic components - CS111, CS112, CS113, CS114, CS115 and CS116 single-gate junction field-effect transistors (Applicable for certification) 770.0 via email in 1~5 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10956-1996 Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) 490.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10886-1996 Detailed specifications for electronic components - 3DD201 bipolar transistors for low frequency amplification case (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10885-1996 Detailed specifications for electronic components -3DA150B and 3DA150C bipolar transistors for high frequency amplification case (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 11060-1996 Detailed specifications for electronic components - 3DG3130 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10792-1996 Detailed specifications for electronic components - 33DX201A, 3DX201B and 3DX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 490.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 11055-1996 Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) 450.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10980-1996 Detailed specifications for electronic components - 2CC23 and 2CC28 silicon tuning variable capacitance diodes (Applicable for certification) 410.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
SJ/T 10960-1996 Detailed specifications for electronic components - 3CG844 silicon PNP ambient-rated transistors for high frequency amplification 450.0 via email in 1~3 business day abolished2010-01-20 ,,1997-1-1
Previous Page     Next Page



Code of China
Search

SJ/T 10961-1996 Detailed specifications for electronic components - 3CG778 silicon PNP ambient-rated transistors for high frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10993-1996 Detailed specifications for electronic components - 2CW380-411 voltage-regulating diodes (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 380.0
SJ/T 11052-1996 Detailed specifications for electronic components - 3DG162 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10992-1996 Detailed specifications for electronic components - 2CW412-473 voltage-regulating diodes (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 380.0
SJ/T 10966-1996 Detailed specifications for electronic components - 3DD100C silicon NPN case-rated transistors for low frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10967-1996 Detailed specifications for electronic components - 3DD203 silicon NPN case-rated transistors for low frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 380.0
SJ/T 10779-1996 Detailed specifications for electronic components - 2CN41 silicon fast-switching rectifier diodes - Assessment level E (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10771-1996 Detailed specifications for electronic components - 3DG111B (111C, 111E and 111F) ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 490.0
SJ/T 10957-1996 Detailed specifications for electronic components - 4CS103 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 11054-1996 Detailed specifications for electronic components - 3DG140 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 450.0
SJ/T 10950-1996 Detailed specifications for electronic components - 2CZ322 ambient-rated silicon rectifier diodes (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 300.0
SJ/T 10834-1996 Detailed specifications for electronic components - CS111, CS112, CS113, CS114, CS115 and CS116 single-gate junction field-effect transistors (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 770.0
SJ/T 10956-1996 Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 490.0
SJ/T 10886-1996 Detailed specifications for electronic components - 3DD201 bipolar transistors for low frequency amplification case (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10885-1996 Detailed specifications for electronic components -3DA150B and 3DA150C bipolar transistors for high frequency amplification case (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 11060-1996 Detailed specifications for electronic components - 3DG3130 ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10792-1996 Detailed specifications for electronic components - 33DX201A, 3DX201B and 3DX201C ambient-rated bipolar transistors for low and high frequency amplification (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 490.0
SJ/T 11055-1996 Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 450.0
SJ/T 10980-1996 Detailed specifications for electronic components - 2CC23 and 2CC28 silicon tuning variable capacitance diodes (Applicable for certification) 
  Issued on: 1996-11-20   Price(USD): 410.0
SJ/T 10960-1996 Detailed specifications for electronic components - 3CG844 silicon PNP ambient-rated transistors for high frequency amplification 
  Issued on: 1996-11-20   Price(USD): 450.0
About Us   |    Contact Us   |    Terms of Service   |    Privacy   |    Cancellation & Refund Policy   |    Payment
Tel: +86-10-8572 5655 | Fax: +86-10-8581 9515 | Email: coc@codeofchina.com | QQ: 672269886
Copyright: Beijing COC Tech Co., Ltd. 2008-2040