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Position: Chinese Standard in English/SJ/T 10956-1996 |
SJ/T 10956-1996 Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) (English Version) | |||
Standard No.: | SJ/T 10956-1996 | Status: | valid remind me the status change
Email: |
Language: | English | File Format: | |
Word Count: | 8500 words | Price(USD): | 490.0 remind me the price change
Email: |
Implemented on: | Delivery: | via email in 1~3 business day | |
Standard No.: | SJ/T 10956-1996 |
English Name: | Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) |
Professional Classification: | SJ Professional Standard - Electronics |
Status: | valid |
Superseding: | GB 9501-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS122 |
Language: | English |
File Format: | |
Word Count: | 8500 words |
Price(USD): | 490.0 |
Delivery: | via email in 1~3 business day |
SJ/T 10956-1996 Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) (English Version) | |||
Standard No. | SJ/T 10956-1996 | ||
Status | valid | ||
Language | English | ||
File Format | |||
Word Count | 8500 words | ||
Price(USD) | 490.0 | ||
Implemented on | |||
Delivery | via email in 1~3 business day |
Standard No. |
SJ/T 10956-1996 |
English Name |
Detailed specifications for electronic components - 4CS122 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification) |
Chinese Name |
Chinese Classification |
Professional Classification |
SJ |
ICS Classification |
Issued by |
Issued on |
Implemented on |
Status |
valid |
Superseded by |
Superseded on |
Abolished on |
Superseding |
GB 9501-1988 Detail specification for electronic component--High frequency silicon dual insulated-gate field-effect transistor of type 4CS122 |
Language |
English |
File Format |
Word Count |
8500 words |
Price(USD) |
490.0 |
Keywords |
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Keywords: | ||
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