| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add to Cart |
| SJ 2286-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG147 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2287-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Tuype 3DG148 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2288-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG149 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2289-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2290-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG151 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2291-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG153 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2292-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG154 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2293-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG155 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2294-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low noise low power transistors, Type 3DG156 |
$180.00 |
via email in 1~3 business day |
abolished2010-01-20 ,,1983-10-1 |
|
| SJ 2354.1-1983 |
General procedures of measurement for electrical and optical parameters of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.10-1983 |
Method of measurement for cross-light factor of PIN and avalanche photodiodes matrix |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.11-1983 |
Method of measurement for width of blind zone of PIN and avalanche photodiode matrix |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.12-1983 |
Method of measurement for temperature factor of reverse breakdown voltage of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.13-1983 |
Method of measurement for multiplication factor of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.14-1983 |
Method of measurement for excess noise factor of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.2-1983 |
Method of measurement for reverse break-down voltage of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.3-1983 |
Method of measurement for dark current of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.4-1983 |
Method of measurement for forward voltage drop of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.5-1983 |
Method of measurement for capacitance of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
| SJ 2354.6-1983 |
Method of measurement for responsivity of PIN and avalanche photodiodes |
$184.00 |
via email in 1~3 business day |
superseded,2015-10-1,1984-7-1 |
|
|
|
