2024-11-22 18.117.107.78
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB 13151-1991 Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, above 100A 150.0 via email in 1~3 business day abolished2005-10-01,2005-10-1,1992-5-1
GB/T 12846-1991 General specification for pulse thyratrons 340.0 via email in 1~3 business day valid,,1991-1-2
GB/T 12847-1991 Blank detail specification for hydrogen thyratrons 380.0 via email in 1~3 business day valid,,1991-1-2
GB/T 13066-1991 Blank detail specification for unijunction transistors 190.0 via email in 1~3 business day abolished2005-10-14,,1992-3-1
GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A 160.0 via email in 1~3 business day abolished2005-10-01,2005-7-1,1992-5-1
GB/T 13150-2005 Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A 120.0 via email in 1~3 business day valid,,2005-10-1
GB/T 13151-2005 Semiconductor devices - Discrete devices - Part 6: thyristors - Section three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents 180.0 via email in 1~3 business day valid,,2005-10-1
GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above 150.0 via email in 1~3 business day abolished2017-12-15,,1992-5-1
GB/T 13153-1991 Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and above 160.0 via email in 1~3 business day abolished2017-12-15,,1992-5-1
GB/T 15291-1994 Semiconductor devices Part 6 Thyristors 1050.0 via email in 1~3 business day abolished2017-01-01 ,2017-1-1,1995-10-1
GB/T 15291-2015 Semiconductor devices — Part 6: Thyristors 1920.0 via email in 1~10 business day valid,,2017-1-1
GB/T 15292-1994 Measuring methods for thyristor Reverse conducting triode thyristor 134.0 via email in 1~3 business day abolished2017-12-15,,1995-10-1
GB/T 15293-1994 Measuring methods for thyristor - Gate turn-off thyristor 60.0 via email in 1~3 business day abolished2017-12-15,,1995-10-1
GB/T 20992-2007 General requirements for thyristors for HVDC transmission 210.0 via email in 1~3 business day valid,,2008-2-1
GB/T 21420-2008 General requirements for light-trigged thyristors for HVDC transmission 130.0 via email in 1~3 business day valid,,2008-9-1
GB/T 6352-1998 Semiconductor devices Discrete devices Part 6:Thyristors-Section One--Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A 180.0 via email in 1~3 business day valid,,1999-6-1
GB/T 6590-1998 Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A 180.0 via email in 1~3 business day valid,,1999-6-1
T/CEC 155-2018 General requirements for press-pack insulate gate bipolar transistors (IGBT) for flexible transmission via email in business day valid,,2018-4-1
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GB 13151-1991 Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, above 100A 
  Issued on: 1991-08-02   Price(USD): 150.0
GB/T 12846-1991 General specification for pulse thyratrons 
  Issued on: 1991-04-28   Price(USD): 340.0
GB/T 12847-1991 Blank detail specification for hydrogen thyratrons 
  Issued on: 1991-04-28   Price(USD): 380.0
GB/T 13066-1991 Blank detail specification for unijunction transistors 
  Issued on: 1991-07-06   Price(USD): 190.0
GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A 
  Issued on: 1991-08-02   Price(USD): 160.0
GB/T 13150-2005 Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A  
  Issued on: 2005-3-23   Price(USD): 120.0
GB/T 13151-2005 Semiconductor devices - Discrete devices - Part 6: thyristors - Section three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents  
  Issued on: 2005-3-23   Price(USD): 180.0
GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above  
  Issued on: 1991-8-2   Price(USD): 150.0
GB/T 13153-1991 Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and above 
  Issued on: 1991-08-02   Price(USD): 160.0
GB/T 15291-1994 Semiconductor devices Part 6 Thyristors 
  Issued on: 1994-01-02   Price(USD): 1050.0
GB/T 15291-2015 Semiconductor devices — Part 6: Thyristors 
  Issued on: 2015-12-31   Price(USD): 1920.0
GB/T 15292-1994 Measuring methods for thyristor Reverse conducting triode thyristor 
  Issued on: 1994-01-02   Price(USD): 134.0
GB/T 15293-1994 Measuring methods for thyristor - Gate turn-off thyristor 
  Issued on: 1994-1-2   Price(USD): 60.0
GB/T 20992-2007 General requirements for thyristors for HVDC transmission 
  Issued on: 2007-7-30   Price(USD): 210.0
GB/T 21420-2008 General requirements for light-trigged thyristors for HVDC transmission 
  Issued on: 2008-01-22   Price(USD): 130.0
GB/T 6352-1998 Semiconductor devices Discrete devices Part 6:Thyristors-Section One--Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A 
  Issued on: 1998-1-1   Price(USD): 180.0
GB/T 6590-1998 Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A 
  Issued on: 1998-1-1   Price(USD): 180.0
T/CEC 155-2018 General requirements for press-pack insulate gate bipolar transistors (IGBT) for flexible transmission 
  Issued on: 2018-01-24   Price(USD):
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