GB/T 13150-2005 English Version, GB/T 13150-2005 Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A (English Version) - Code of China
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Position: Chinese Standard in English/GB/T 13150-2005
GB/T 13150-2005   Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A (English Version)
Standard No.: GB/T 13150-2005 Status:valid remind me the status change
Language:English File Format:PDF
Word Count: 4000 words Price(USD):120.00 remind me the price change
Implemented on:2005-10-1 Delivery: via email in 1~3 business day
Standard No.: GB/T 13150-2005
English Name: Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A
Chinese Name: 半导体器件 分立器件 电流大于100A、环境和管壳额定的双向三级晶闸管空白详细规范
Chinese Classification: K46    Power semiconductor device and parts
Professional Classification: GB    National Standard
ICS Classification: 31.080.20 31.080.20    Thyristors 31.080.20
Issued by: AQSIQ; SAC
Issued on: 2005-3-23
Implemented on: 2005-10-1
Status: valid
Superseding:GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A
Language: English
File Format: PDF
Word Count: 4000 words
Price(USD): 120.00
Delivery: via email in 1~3 business day
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