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Position: Chinese Standard in English/GB/T 14847-1993
GB/T 14847-1993   Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance (English Version)
Standard No.: GB/T 14847-1993 Status:superseded remind me the status change

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Target Language:English File Format:PDF
Word Count: 3500 words Translation Price(USD):300.0 remind me the price change

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Implemented on:1994-9-1 Delivery: via email in 1~3 business day

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,2011-10-1,1994-9-1,EEB882907FC20AFE1513905432767
Standard No.: GB/T 14847-1993
English Name: Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
Chinese Name: 重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
Chinese Classification: H21    Metal physical property test method
Professional Classification: GB    National Standard
Source Content Issued by: SBTS
Issued on: 1993-01-02
Implemented on: 1994-9-1
Status: superseded
Superseded by:GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Superseded on:2011-10-1
Target Language: English
File Format: PDF
Word Count: 3500 words
Translation Price(USD): 300.0
Delivery: via email in 1~3 business day
本标准规定了重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法。本标准适用于衬底室温电阻率小于0.02Ω・cm和外延层室温电阻率大于0.1Ω・cm且外延层厚度大于2μm的硅外延层厚度的测量。
Code of China
Standard
GB/T 14847-1993  Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance (English Version)
Standard No.GB/T 14847-1993
Statussuperseded
LanguageEnglish
File FormatPDF
Word Count3500 words
Price(USD)300.0
Implemented on1994-9-1
Deliveryvia email in 1~3 business day
Detail of GB/T 14847-1993
Standard No.
GB/T 14847-1993
English Name
Test method for thickness of lightly doped silicon eqitaxial layers on heavily doped silicon substrates by infrared reflectance
Chinese Name
重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法
Chinese Classification
H21
Professional Classification
GB
ICS Classification
Issued by
SBTS
Issued on
1993-01-02
Implemented on
1994-9-1
Status
superseded
Superseded by
GB/T 14847-2010 Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
Superseded on
2011-10-1
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
3500 words
Price(USD)
300.0
Keywords
GB/T 14847-1993, GB 14847-1993, GBT 14847-1993, GB/T14847-1993, GB/T 14847, GB/T14847, GB14847-1993, GB 14847, GB14847, GBT14847-1993, GBT 14847, GBT14847
Introduction of GB/T 14847-1993
本标准规定了重掺杂衬底上轻掺杂硅外延层厚度的红外反射测量方法。本标准适用于衬底室温电阻率小于0.02Ω・cm和外延层室温电阻率大于0.1Ω・cm且外延层厚度大于2μm的硅外延层厚度的测量。
Contents of GB/T 14847-1993
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Keywords:
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