GB/T 14863-1993 English Version, GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes (English Version)

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GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes (English Version)
Standard No.:	GB/T 14863-1993	Status:	superseded remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	5000 words	Price(USD):	150.0 remind me the price change Email:
Implemented on:	1994-10-1	Delivery:	via email in 1~3 business day

Standard No.:	GB/T 14863-1993
English Name:	test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes
Chinese Name:	用栅控和非栅控二极管的电压-电容关系测定硅外延层中净载流子浓度的标准方法
Chinese Classification:	L41 Semiconductor diode
Professional Classification:	GB National Standard
Issued by:	AQSIQ
Issued on:	1993-1-2
Implemented on:	1994-10-1
Status:	superseded
Superseded by:	GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Superseded on:	2014-8-15
Abolished on:	2014-08-15
Language:	English
File Format:	PDF
Word Count:	5000 words
Price(USD):	150.0
Delivery:	via email in 1~3 business day

Standard

GB/T 14863-1993 test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes (English Version)
Standard No.	GB/T 14863-1993
Status	superseded
Language	English
File Format	PDF
Word Count	5000 words
Price(USD)	150.0
Implemented on	1994-10-1
Delivery	via email in 1~3 business day

Detail of GB/T 14863-1993

Standard No.

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Chinese Name

Chinese Classification

Professional Classification

ICS Classification

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Implemented on

Status

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Superseded on

Abolished on

Superseding

Language

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Introduction of GB/T 14863-1993

本标准规定了用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的原理、仪器与材料、样品制备、测量步骤和数据处理。本标准适用于外延层厚度不小于某一最小厚度值(见附录Ｂ)的相同或相反导电类型衬底上的n型或p型外延层，也适用于体材料。

Contents of GB/T 14863-1993

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