GB/T 32189-2015 English Version, GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope (English Version)

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GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope (English Version)
Standard No.:	GB/T 32189-2015	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	7500 words	Translation Price(USD):	180.0 remind me the price change Email:
Implemented on:	2016-11-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 32189-2015
English Name:	Test method for surface roughness of GaN single crystal substrate by atomic force microscope
Chinese Name:	氮化镓单晶衬底表面粗糙度的原子力显微镜检验法
Chinese Classification:	H21 Metal physical property test method
Professional Classification:	GB National Standard
Source Content Issued by:	AQSIQ; SAC
Issued on:	2015-12-10
Implemented on:	2016-11-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	7500 words
Translation Price(USD):	180.0
Delivery:	via email in 1~3 business day

Standard

GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope (English Version)
Standard No.	GB/T 32189-2015
Status	valid
Language	English
File Format	PDF
Word Count	7500 words
Price(USD)	180.0
Implemented on	2016-11-1
Delivery	via email in 1~3 business day

Detail of GB/T 32189-2015

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Introduction of GB/T 32189-2015

本标准规定了用原子力显微镜测试氮化镓单晶衬底表面粗糙度的方法。
本标准适用于化学气相沉积及其他方法生长制备的表面粗糙度小于10nm 的氮化镓单晶衬底。其他具有相似表面结构的半导体单晶衬底应用本标准提供的方法进行测试前,需经测试双方协商达成一致。

Contents of GB/T 32189-2015

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