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| GB/T 32189-2015 Test method for surface roughness of GaN single crystal substrate by atomic force microscope (English Version) |
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Detail of GB/T 32189-2015
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Introduction of GB/T 32189-2015
本标准规定了用原子力显微镜测试氮化镓单晶衬底表面粗糙度的方法。
本标准适用于化学气相沉积及其他方法生长制备的表面粗糙度小于10nm 的氮化镓单晶衬底。其他具有相似表面结构的半导体单晶衬底应用本标准提供的方法进行测试前,需经测试双方协商达成一致。
Contents of GB/T 32189-2015