Standard No.:	GB/T 33657-2017
English Name:	Nanotechnologies―Electrical operating parameter test specification of wafer level nano-scale phase change memory cells
Chinese Name:	纳米技术 晶圆级纳米尺度相变存储单元电学操作参数测试规范
Chinese Classification:	L56    Semiconductor integrated circuit
Professional Classification:	GB    National Standard
Issued by:	MOHURD; AQSIQ
Issued on:	2017-05-12
Implemented on:	2017-12-1
Status:	valid
Language:	English
File Format:	PDF
Word Count:	7500 words
Price(USD):	220.00
Delivery:	via email in 1~3 business day

本标准规定了纳米尺度相变存储单元读写擦参数的晶圆测试规范，其测试结果可用于表征相变存储材料或器件的电学可操作性能。?本标准适用于以硫系化合物为主要原料，基于半导体晶圆工艺加工制造的电极尺度小于100 nm的相变存储单元，100 nm～300 nm的相变存储单元也可参照本标准执行。?本标准不适用于包含外围驱动电路的存储单元。?