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Position: Chinese Standard in English/GB/T 41853-2022
GB/T 41853-2022   Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement (English Version)
Standard No.: GB/T 41853-2022 Status:valid remind me the status change

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Language:English File Format:PDF
Word Count: 10500 words Price(USD):315.0 remind me the price change

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Implemented on: Delivery: via email in 1~5 business day
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Standard No.: GB/T 41853-2022
English Name: Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
Chinese Name: 半导体器件 微机电器件 晶圆间键合强度测量
Chinese Classification: L55    Microcircuit in general
Professional Classification: GB    National Standard
ICS Classification: 31.080.99 31.080.99    Other semiconductor devices 31.080.99
Issued by: AQSIQ and SAMR
Issued on: 2022-10-12
Status: valid
Language: English
File Format: PDF
Word Count: 10500 words
Price(USD): 315.0
Delivery: via email in 1~5 business day
本文件规定了晶圆键合后键合强度的测量方法，适用于硅-硅共熔键合、硅-玻璃阳极键合等多种晶圆键合方式，以及MEMS工艺、组装流程中相关结构尺寸的键合强度的评估。适用于从十微米到几毫米厚的晶圆间的键合强度测量。
Code of China
Standard
GB/T 41853-2022  Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement (English Version)
Standard No.GB/T 41853-2022
Statusvalid
LanguageEnglish
File FormatPDF
Word Count10500 words
Price(USD)315.0
Implemented on
Deliveryvia email in 1~5 business day
Detail of GB/T 41853-2022
Standard No.
GB/T 41853-2022
English Name
Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
Chinese Name
半导体器件 微机电器件 晶圆间键合强度测量
Chinese Classification
L55
Professional Classification
GB
ICS Classification
Issued by
AQSIQ and SAMR
Issued on
2022-10-12
Implemented on
Status
valid
Superseded by
Superseded on
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
10500 words
Price(USD)
315.0
Keywords
GB/T 41853-2022, GB 41853-2022, GBT 41853-2022, GB/T41853-2022, GB/T 41853, GB/T41853, GB41853-2022, GB 41853, GB41853, GBT41853-2022, GBT 41853, GBT41853
Introduction of GB/T 41853-2022
本文件规定了晶圆键合后键合强度的测量方法，适用于硅-硅共熔键合、硅-玻璃阳极键合等多种晶圆键合方式，以及MEMS工艺、组装流程中相关结构尺寸的键合强度的评估。适用于从十微米到几毫米厚的晶圆间的键合强度测量。
Contents of GB/T 41853-2022
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Keywords:
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