GB/T 42902-2023 English Version, GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers―Laser scattering method (English Version)

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GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers―Laser scattering method (English Version)
Standard No.:	GB/T 42902-2023	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	8500 words	Translation Price(USD):	255.0 remind me the price change Email:
Implemented on:	2024-3-1	Delivery:	via email in 1~3 business day

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Standard No.:	GB/T 42902-2023
English Name:	Test method for surface defects on silicon carbide epitaxial wafers―Laser scattering method
Chinese Name:	碳化硅外延片表面缺陷的测试激光散射法
Chinese Classification:	H21 Metal physical property test method
Professional Classification:	GB National Standard
Source Content Issued by:	SAMR; SAC
Issued on:	2023-08-06
Implemented on:	2024-3-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	8500 words
Translation Price(USD):	255.0
Delivery:	via email in 1~3 business day

Standard

GB/T 42902-2023 Test method for surface defects on silicon carbide epitaxial wafers―Laser scattering method (English Version)
Standard No.	GB/T 42902-2023
Status	valid
Language	English
File Format	PDF
Word Count	8500 words
Price(USD)	255.0
Implemented on	2024-3-1
Delivery	via email in 1~3 business day

Detail of GB/T 42902-2023

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Introduction of GB/T 42902-2023

本文件描述了激光散射法测试碳化硅外延片表面缺陷的方法。
本文件适用于4H-SiC外延片的表面缺陷测试。

Contents of GB/T 42902-2023

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Keywords:
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