GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers―Noncontact eddy-current sensor (English Version)
GB/T 42907-2023 Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers―Noncontact eddy-current sensor (English Version)
Standard No.
GB/T 42907-2023
Status
valid
Language
English
File Format
PDF
Word Count
8500 words
Price(USD)
255.0
Implemented on
2024-3-1
Delivery
via email in 1~3 business day
Detail of GB/T 42907-2023
Standard No.
GB/T 42907-2023
English Name
Test method for excess-charge-carrier recombination lifetime in silicon ingots,silicon bricks and silicon wafers―Noncontact eddy-current sensor