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QC/T 1264-2025   Technical rquirements and testing methods for analog front end chip of battery management system in electric vehicles (English Version)
Standard No.: QC/T 1264-2025 Status:to be valid remind me the status change

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Target Language:English File Format:PDF
Word Count: 12000 words Translation Price(USD):360.0 remind me the price change

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Implemented on:2026-7-1 Delivery: via email in 1~5 business day

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Standard No.: QC/T 1264-2025
English Name: Technical rquirements and testing methods for analog front end chip of battery management system in electric vehicles
Chinese Name: 电动汽车动力电池管理系统模拟前端芯片技术要求及试验方法
Professional Classification: QC    Professional Standard - Automobile
Source Content Issued by: MIIT
Issued on: 2025-12-17
Implemented on: 2026-7-1
Status: to be valid
Target Language: English
File Format: PDF
Word Count: 12000 words
Translation Price(USD): 360.0
Delivery: via email in 1~5 business day
QC/T 1264-2025 Technical rquirements and testing methods for analog front end chip of battery management system in electric vehicles English, Anglais, Englisch, Inglés, えいご This is a draft translation for reference among interesting stakeholders. The finalized translation (passing through draft translation, self-check, revision and verification) will be delivered upon being ordered. ICS T Professional Standard of the People's Republic of China QC/T 1264-2025 Technical requirements and testing methods for analog front end chip of battery management system in electric vehicles 电动汽车动力电池管理系统模拟前端芯片技术要求及试验方法 (English Translation) Issue date: 2025-12-17 Implementation date: 2026-07-01 Issued by the Ministry of Industry and Information Technology of the People's Republic of China Contents Foreword 1 Scope 2 Normative references 3 Terms and definitions 4 Abbreviations and symbols 5 Technical requirements 5.1 Functional requirements 5.2 Performance requirements 5.3 Functional safety 5.4 Flame retardancy rating 5.5 Reliability 5.6 Environmental adaptability 5.7 Electromagnetic compatibility 6 Test methods 6.1 Test conditions 6.2 Performance tests 6.3 Reliability tests 6.4 Environmental adaptability tests 6.5 Electromagnetic compatibility tests Appendix A (Normative) Functional status levels Appendix B (Informative) Hot plugging test method Technical Requirements and Test Methods for Battery Management System Analog Front-End Chips for Electric Vehicles 1 Scope This document specifies the technical requirements and test methods for battery management system analog front-end chips for electric vehicles. This document applies to battery management system analog front-end chips used in electric vehicles. 2 Normative References The following documents, through normative reference in the text, constitute indispensable provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition (including any amendments) applies. GB/T 2408-2021 Plastics - Determination of burning behaviour by horizontal and vertical test GB/T 2423.1-2008 Environmental testing for electric and electronic products - Part 2: Test methods - Test A: Low temperature GB/T 4937.3 Mechanical and climatic test methods for semiconductor devices - Part 3: External visual inspection GB/T 4937.4 Mechanical and climatic test methods for semiconductor devices - Part 4: Highly accelerated steady-state humidity and temperature stress test (HAST) GB/T 4937.6 Mechanical and climatic test methods for semiconductor devices - Part 6: High temperature storage GB/T 4937.21 Mechanical and climatic test methods for semiconductor devices - Part 21: Solderability GB/T 4937.22 Mechanical and climatic test methods for semiconductor devices - Part 22: Bond strength GB/T 4937.23 Mechanical and climatic test methods for semiconductor devices - Part 23: High temperature operating life GB/T 4937.24 Mechanical and climatic test methods for semiconductor devices - Part 24: Unbiased highly accelerated stress test (UHST) GB/T 4937.25 Mechanical and climatic test methods for semiconductor devices - Part 25: Temperature cycling GB/T 4937.26 Mechanical and climatic test methods for semiconductor devices - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) GB/T 4937.28 Mechanical and climatic test methods for semiconductor devices - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) device level GB/T 4937.29 Mechanical and climatic test methods for semiconductor devices - Part 29: Latch-up test GB/T 4937.30 Mechanical and climatic test methods for semiconductor devices - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing GB/T 17626.4 Electromagnetic compatibility (EMC) - Testing and measurement techniques - Electrical fast transient/burst immunity test GB/T 17626.5 Electromagnetic compatibility (EMC) - Testing and measurement techniques - Surge immunity test GB/T 18655-2018 Vehicles, boats and internal combustion engines - Radio disturbance characteristics - Limits and methods of measurement for the protection of on-board receivers GB/T 19596 Terminology of electric vehicles GB/T 19951 Road vehicles - Component test methods for electrical disturbances from electrostatic discharge GB/T 21437.3-2021 Road vehicles - Electrical disturbances from conduction and coupling - Part 3: Electrical transient conduction by capacitive and inductive coupling via lines other than supply lines GB/T 28046.4-2011 Road vehicles - Environmental conditions and testing for electrical and electronic equipment - Part 4: Climatic loads GB/T 33014.2 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 2: Absorber-lined shielded enclosure GB/T 33014.4-2016 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 4: Bulk current injection (BCI) method GB/T 33014.8 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 8: Immunity to magnetic fields GB/T 33014.9 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 9: Portable transmitters simulation method GB/T 34590 Road vehicles - Functional safety (series standards) ISO/TS 7637-4:2020 Road vehicles - Electrical disturbances from conduction and coupling - Part 4: Electrical transient conduction along shielded high voltage supply lines only 3 Terms and Definitions The terms and definitions defined in GB/T 19596 and the following apply to this document. 3.1 analog front end (AFE) chip A key component in electronic equipment responsible for converting analog signals to digital signals. It conditions signals using techniques such as amplification and filtering, digitizes analog signals through an analog-to-digital converter, and serves as the sampling chip for electric vehicle battery management systems. Note: An analog front end typically includes functional modules such as multiplexed analog switches, filtering and amplification, level shifting, analog-to-digital conversion, and digital logic control. 3.2 hot plugging The process of connecting or disconnecting the analog front-end chip to/from the traction battery pack. 3.3 internal balancing A process where battery cells are discharged through internal electronic switching devices within the analog front-end sampling chip. 3.4 external balancing A process where battery cells are discharged through external electronic switching devices controlled by the analog front-end sampling chip. 4 Abbreviations and Symbols The following abbreviations and symbols apply to this document. AFE: Analog Front End ASIL: Automotive Safety Integrity Level GPIO: General Purpose Input/Output, used for temperature sampling of the AFE chip ISHDN: Supply current of the AFE chip in shutdown state ISLP: Supply current of the AFE chip in sleep state ISPMON: Supply current of the AFE chip in sleep monitor state IACT: Supply current of the AFE chip in active state ΔIACT: Maximum difference in supply current among AFE chips in active state ICB: AFE chip internal balancing current NMAX: Maximum number of voltage sampling channels supported by the AFE chip NMIN: Minimum number of voltage sampling channels supported by the AFE chip
Code of China
Standard
QC/T 1264-2025  Technical rquirements and testing methods for analog front end chip of battery management system in electric vehicles (English Version)
Standard No.QC/T 1264-2025
Statusto be valid
LanguageEnglish
File FormatPDF
Word Count12000 words
Price(USD)360.0
Implemented on2026-7-1
Deliveryvia email in 1~5 business day
Detail of QC/T 1264-2025
Standard No.
QC/T 1264-2025
English Name
Technical rquirements and testing methods for analog front end chip of battery management system in electric vehicles
Chinese Name
电动汽车动力电池管理系统模拟前端芯片技术要求及试验方法
Chinese Classification
Professional Classification
QC
ICS Classification
Issued by
MIIT
Issued on
2025-12-17
Implemented on
2026-7-1
Status
to be valid
Superseded by
Superseded on
Abolished on
Superseding
Language
English
File Format
PDF
Word Count
12000 words
Price(USD)
360.0
Keywords
QC/T 1264-2025, QC 1264-2025, QCT 1264-2025, QC/T1264-2025, QC/T 1264, QC/T1264, QC1264-2025, QC 1264, QC1264, QCT1264-2025, QCT 1264, QCT1264
Introduction of QC/T 1264-2025
QC/T 1264-2025 Technical rquirements and testing methods for analog front end chip of battery management system in electric vehicles English, Anglais, Englisch, Inglés, えいご This is a draft translation for reference among interesting stakeholders. The finalized translation (passing through draft translation, self-check, revision and verification) will be delivered upon being ordered. ICS T Professional Standard of the People's Republic of China QC/T 1264-2025 Technical requirements and testing methods for analog front end chip of battery management system in electric vehicles 电动汽车动力电池管理系统模拟前端芯片技术要求及试验方法 (English Translation) Issue date: 2025-12-17 Implementation date: 2026-07-01 Issued by the Ministry of Industry and Information Technology of the People's Republic of China Contents Foreword 1 Scope 2 Normative references 3 Terms and definitions 4 Abbreviations and symbols 5 Technical requirements 5.1 Functional requirements 5.2 Performance requirements 5.3 Functional safety 5.4 Flame retardancy rating 5.5 Reliability 5.6 Environmental adaptability 5.7 Electromagnetic compatibility 6 Test methods 6.1 Test conditions 6.2 Performance tests 6.3 Reliability tests 6.4 Environmental adaptability tests 6.5 Electromagnetic compatibility tests Appendix A (Normative) Functional status levels Appendix B (Informative) Hot plugging test method Technical Requirements and Test Methods for Battery Management System Analog Front-End Chips for Electric Vehicles 1 Scope This document specifies the technical requirements and test methods for battery management system analog front-end chips for electric vehicles. This document applies to battery management system analog front-end chips used in electric vehicles. 2 Normative References The following documents, through normative reference in the text, constitute indispensable provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition (including any amendments) applies. GB/T 2408-2021 Plastics - Determination of burning behaviour by horizontal and vertical test GB/T 2423.1-2008 Environmental testing for electric and electronic products - Part 2: Test methods - Test A: Low temperature GB/T 4937.3 Mechanical and climatic test methods for semiconductor devices - Part 3: External visual inspection GB/T 4937.4 Mechanical and climatic test methods for semiconductor devices - Part 4: Highly accelerated steady-state humidity and temperature stress test (HAST) GB/T 4937.6 Mechanical and climatic test methods for semiconductor devices - Part 6: High temperature storage GB/T 4937.21 Mechanical and climatic test methods for semiconductor devices - Part 21: Solderability GB/T 4937.22 Mechanical and climatic test methods for semiconductor devices - Part 22: Bond strength GB/T 4937.23 Mechanical and climatic test methods for semiconductor devices - Part 23: High temperature operating life GB/T 4937.24 Mechanical and climatic test methods for semiconductor devices - Part 24: Unbiased highly accelerated stress test (UHST) GB/T 4937.25 Mechanical and climatic test methods for semiconductor devices - Part 25: Temperature cycling GB/T 4937.26 Mechanical and climatic test methods for semiconductor devices - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) GB/T 4937.28 Mechanical and climatic test methods for semiconductor devices - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) device level GB/T 4937.29 Mechanical and climatic test methods for semiconductor devices - Part 29: Latch-up test GB/T 4937.30 Mechanical and climatic test methods for semiconductor devices - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing GB/T 17626.4 Electromagnetic compatibility (EMC) - Testing and measurement techniques - Electrical fast transient/burst immunity test GB/T 17626.5 Electromagnetic compatibility (EMC) - Testing and measurement techniques - Surge immunity test GB/T 18655-2018 Vehicles, boats and internal combustion engines - Radio disturbance characteristics - Limits and methods of measurement for the protection of on-board receivers GB/T 19596 Terminology of electric vehicles GB/T 19951 Road vehicles - Component test methods for electrical disturbances from electrostatic discharge GB/T 21437.3-2021 Road vehicles - Electrical disturbances from conduction and coupling - Part 3: Electrical transient conduction by capacitive and inductive coupling via lines other than supply lines GB/T 28046.4-2011 Road vehicles - Environmental conditions and testing for electrical and electronic equipment - Part 4: Climatic loads GB/T 33014.2 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 2: Absorber-lined shielded enclosure GB/T 33014.4-2016 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 4: Bulk current injection (BCI) method GB/T 33014.8 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 8: Immunity to magnetic fields GB/T 33014.9 Road vehicles - Component test methods for electrical disturbances from narrowband radiated electromagnetic energy - Part 9: Portable transmitters simulation method GB/T 34590 Road vehicles - Functional safety (series standards) ISO/TS 7637-4:2020 Road vehicles - Electrical disturbances from conduction and coupling - Part 4: Electrical transient conduction along shielded high voltage supply lines only 3 Terms and Definitions The terms and definitions defined in GB/T 19596 and the following apply to this document. 3.1 analog front end (AFE) chip A key component in electronic equipment responsible for converting analog signals to digital signals. It conditions signals using techniques such as amplification and filtering, digitizes analog signals through an analog-to-digital converter, and serves as the sampling chip for electric vehicle battery management systems. Note: An analog front end typically includes functional modules such as multiplexed analog switches, filtering and amplification, level shifting, analog-to-digital conversion, and digital logic control. 3.2 hot plugging The process of connecting or disconnecting the analog front-end chip to/from the traction battery pack. 3.3 internal balancing A process where battery cells are discharged through internal electronic switching devices within the analog front-end sampling chip. 3.4 external balancing A process where battery cells are discharged through external electronic switching devices controlled by the analog front-end sampling chip. 4 Abbreviations and Symbols The following abbreviations and symbols apply to this document. AFE: Analog Front End ASIL: Automotive Safety Integrity Level GPIO: General Purpose Input/Output, used for temperature sampling of the AFE chip ISHDN: Supply current of the AFE chip in shutdown state ISLP: Supply current of the AFE chip in sleep state ISPMON: Supply current of the AFE chip in sleep monitor state IACT: Supply current of the AFE chip in active state ΔIACT: Maximum difference in supply current among AFE chips in active state ICB: AFE chip internal balancing current NMAX: Maximum number of voltage sampling channels supported by the AFE chip NMIN: Minimum number of voltage sampling channels supported by the AFE chip
Contents of QC/T 1264-2025
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Keywords:
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