Standard No.:	QC/T 1265-2025
English Name:	Technical requirements and test methods of power drive chip for electric vehicles
Chinese Name:	电动汽车用功率驱动芯片技术要求及试验方法
Professional Classification:	QC    Professional Standard - Automobile
Source Content Issued by:	MIIT
Issued on:	2025-12-17
Implemented on:	2026-7-1
Status:	to be valid
Target Language:	English
File Format:	PDF
Word Count:	11000 words
Translation Price(USD):	330.0
Delivery:	via email in 1~5 business day

QC/T 1265-2025 Technical requirements and test methods of power drive chip for electric vehicles English, Anglais, Englisch, Inglés, えいご This is a draft translation for reference among interesting stakeholders. The finalized translation (passing through draft translation, self-check, revision and verification) will be delivered upon being ordered. ICS T Professional Standard of the People's Republic of China QC/T 1265-2025 Technical requirements and test methods of power drive chip for electric vehicles 电动汽车用功率驱动芯片技术要求及试验方法 (English Translation) Issue date: 2025-12-17 Implementation date: 2026-07-01 Issued by the Ministry of Industry and Information Technology of the People's Republic of China Contents Foreword 1 Scope 2 Normative references 3 Terms and definitions 4 Symbols and abbreviations 5 Technical requirements 5.1 Operating temperature requirements 5.2 Functional requirements 5.3 Performance requirements 5.4 Reliability 5.5 Electromagnetic compatibility 6 Test methods 6.1 Environmental conditions 6.2 Appearance requirements 6.3 Functional tests 6.4 Performance tests 6.5 Reliability tests 6.6 Electromagnetic compatibility tests Technical Requirements and Test Methods for Power Gate Driver Chips for Electric Vehicles 1 Scope This document specifies the technical requirements and test methods for power gate driver chips used in electric vehicles. This document applies to power gate driver chips used in high-voltage components of electric vehicles. Other power-type chips may be referenced for use. 2 Normative References The following documents, through normative reference in the text, constitute indispensable provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition (including any amendments) applies. GB/T 2408 Plastics - Determination of burning behaviour by horizontal and vertical test GB/T 2423.1 Environmental testing for electric and electronic products - Part 2: Test methods - Test A: Low temperature GB/T 4937.3 Mechanical and climatic test methods for semiconductor devices - Part 3: External visual inspection GB/T 4937.4 Mechanical and climatic test methods for semiconductor devices - Part 4: Highly accelerated steady-state humidity and temperature stress test (HAST) GB/T 4937.6 Mechanical and climatic test methods for semiconductor devices - Part 6: High temperature storage GB/T 4937.10 Mechanical and climatic test methods for semiconductor devices - Part 10: Mechanical shock GB/T 4937.12 Mechanical and climatic test methods for semiconductor devices - Part 12: Vibration, variable frequency GB/T 4937.19 Mechanical and climatic test methods for semiconductor devices - Part 19: Die shear strength GB/T 4937.21 Mechanical and climatic test methods for semiconductor devices - Part 21: Solderability GB/T 4937.22 Mechanical and climatic test methods for semiconductor devices - Part 22: Bond strength GB/T 4937.23 Mechanical and climatic test methods for semiconductor devices - Part 23: High temperature operating life GB/T 4937.25 Mechanical and climatic test methods for semiconductor devices - Part 25: Temperature cycling GB/T 4937.26 Mechanical and climatic test methods for semiconductor devices - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM) GB/T 4937.29 Mechanical and climatic test methods for semiconductor devices - Part 29: Latch-up test GB/T 4937.30 Mechanical and climatic test methods for semiconductor devices - Part 30: Preconditioning of non-hermetic surface mount devices prior to reliability testing GB/T 4937.33 Mechanical and climatic test methods for semiconductor devices - Part 33: Accelerated moisture resistance - Unbiased autoclave GB/T 4937.34 Mechanical and climatic test methods for semiconductor devices - Part 34: Power cycling GB/T 16935.1 Insulation coordination for equipment within low-voltage supply systems - Part 1: Principles, requirements and tests GB/T 18488-2024 Drive motor system for electric vehicles GB/T 18655 Vehicles, boats and internal combustion engines - Radio disturbance characteristics - Limits and methods of measurement for the protection of on-board receivers GB/T 34590 Road vehicles - Functional safety series standards GB/T 35003 Test method for endurance and data retention of non-volatile memory GB/T 37123 Electrically driven air conditioners for automobiles GB/T 40432 Conductive on-board chargers for electric vehicles IEC 60749-28 Semiconductor devices - Mechanical and climatic test methods - Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - Device level 3 Terms and Definitions The following terms and definitions apply to this document. 3.1 power device gate driver chip Used to drive power devices to perform switching actions, characterized by high driving voltage and high driving current. Commonly used in electric vehicle motor controllers, on-board chargers, and on-board air conditioners, etc. 3.2 propagation delay time The time required for a driving signal to propagate from the primary side input to the secondary side output. 3.3 common mode transient immunity (CMTI) The maximum tolerable rate of rise or fall of the common-mode voltage. 3.4 maximum isolation working voltage The highest withstand voltage that can be sustained between the input and output terminals of the power gate driver chip in an electrically isolated state. 3.5 dead time In a half-bridge drive circuit, a protection time set to prevent simultaneous conduction of the upper and lower power devices due to their turn-off delay issues. 4 Symbols and Abbreviations The following symbols and abbreviations apply to this document. AC: Autoclave CDM: Charged Device Model CMTI: Common Mode Transient Immunity Cpk: Process Capability Index CLAMP: Active Miller Clamp Desat: Desaturation Protection Detection DSS: Die Shear Strength DT1: Built-in default dead time between secondary channel A output and channel B output (applicable to dual-channel output power gate driver chips) DT2: Dead time between secondary channel A output and channel B output after adjustment using the dead time adjustment resistor RDT (applicable to dual-channel output power gate driver chips) EDR: Endurance and Data Retention of Non-volatile Memory ESD: Electrostatic Discharge ELFR: Early Life Failure Rate FMEDA: Failure Mode, Effects, and Diagnostic Analysis FLT: Fault Alarm Signal GND: Primary side ground (applicable to dual-channel output power gate driver chips)