SJ 20016-1992 English Version, SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes (English Version)

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SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes (English Version)
Standard No.:	SJ 20016-1992	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	5000 words	Translation Price(USD):	150.0 remind me the price change Email:
Implemented on:	1992-5-1	Delivery:	via email in 1~3 business day

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Standard No.:	SJ 20016-1992
English Name:	Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes
Chinese Name:	半导体分立器件ＧＰ、ＧＴ和ＧＣＴ级３ＤＧ１８２型ＮＰＮ硅小功率高反压晶体管详细规范
Chinese Classification:	A01 Technical Management
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	China Electronics Corporation
Issued on:	1992-02-01
Implemented on:	1992-5-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	5000 words
Translation Price(USD):	150.0
Delivery:	via email in 1~3 business day

Standard

SJ 20016-1992 Semiconductor discrete device. Detail specification for PNP silicon low-power high-reverse-voltage transistor for types 3DG182 GP, GT and types GCT classes (English Version)
Standard No.	SJ 20016-1992
Status	valid
Language	English
File Format	PDF
Word Count	5000 words
Price(USD)	150.0
Implemented on	1992-5-1
Delivery	via email in 1~3 business day

Detail of SJ 20016-1992

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Introduction of SJ 20016-1992

本规范规定了3DG130型NPN硅高频小功率晶体管(以下简称器件)的详细要求。该种器件按GJB33-85《半导体分立器件总规范》的规定，提供产品保证的三个等级(GP、GT和GCT级)。

Contents of SJ 20016-1992

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Keywords:
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