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| Position: Chinese Standard in English/SJ 2380-1983 |
| SJ 2380-1983 Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD555, 3CD556 and 3CD655 (English Version) | |||
| Standard No.: | SJ 2380-1983 | Status: | abolished remind me the status change |
| Target Language: | English | File Format: | |
| Word Count: | 3500 words | Translation Price(USD): | 180.0 remind me the price change |
| Implemented on: | 1984-3-1 | Delivery: | via email in 1~3 business day |
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| Standard No.: | SJ 2380-1983 |
| English Name: | Detail specification for silicon PNP epitaxial planar low frequency high power transistors, Type 3CD555, 3CD556 and 3CD655 |
| Chinese Name: | ３ＣＤ５５５、３ＣＤ５５６、３ＣＤ６５５型ＰＮＰ硅外延平面低频大功率三极管 |
| Chinese Classification: | F01 Technical management |
| Professional Classification: | SJ Professional Standard - Electronics |
| Issued on: | 1983-08-19 |
| Implemented on: | 1984-3-1 |
| Status: | abolished |
| Abolished on: | 2010-01-20 |
| Target Language: | English |
| File Format: | |
| Word Count: | 3500 words |
| Translation Price(USD): | 180.0 |
| Delivery: | via email in 1~3 business day |