SJ/T 10482-1994 English Version, SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques (English Version)

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SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques (English Version)
Standard No.:	SJ/T 10482-1994	Status:	valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	3000 words	Translation Price(USD):	90.0 remind me the price change Email:
Implemented on:	1994-10-1	Delivery:	via email in 1~3 business day

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Standard No.:	SJ/T 10482-1994
English Name:	Test method for characterizing semiconductor deep levels by transient capacitance techniques
Chinese Name:	半导体中深能级的瞬态电容测试方法
Chinese Classification:	F01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	Ministry of Electronics Industry
Issued on:	1994-04-11
Implemented on:	1994-10-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	3000 words
Translation Price(USD):	90.0
Delivery:	via email in 1~3 business day

Standard

SJ/T 10482-1994 Test method for characterizing semiconductor deep levels by transient capacitance techniques (English Version)
Standard No.	SJ/T 10482-1994
Status	valid
Language	English
File Format	PDF
Word Count	3000 words
Price(USD)	90.0
Implemented on	1994-10-1
Delivery	via email in 1~3 business day

Detail of SJ/T 10482-1994

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Introduction of SJ/T 10482-1994

本标准规定了用瞬态电容技术中的深能级瞬态谱(DLTS)法测量半导体材料中深能级的测试方法。
本标准适用于测量硅、砷化稼等半导体材料中杂质、缺陷在半导体禁带中产生的深能级。
由此法可得到深能级的激活能、浓度、指数前因子A等参数。本标准适用于产生指数形式电
容瞬态有关的深能级。

Contents of SJ/T 10482-1994

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