Standard No.:	SJ/T 10627-1995
English Name:	Test methods for oxygen precipitation characterization of silicon wafers by measurement of interstitial oxygen reduction
Chinese Name:	通过测量间隙氧含量的减少表征硅片氧沉淀特性的方法
Chinese Classification:	A01    Technical Management
Professional Classification:	SJ    Professional Standard - Electronics
Source Content Issued by:	Ministry of Electronics Industry
Issued on:	1995-04-22
Implemented on:	1995-10-1
Status:	abolished
Abolished on:	2010-01-20
Target Language:	English
File Format:	PDF
Word Count:	3500 words
Translation Price(USD):	180.0
Delivery:	via email in 1~3 business day

本标准规定了通过测定热退火前后硅片中间隙氧含量的减少来表征氧沉淀特性的方法。
本标准适用于室温电阻率大于0.1Ω .CM 的N型或P型直拉硅晶片，其热循环可为单一
温度或双温度。