Standard No.:	SJ/T 12005-2025
English Name:	Silicon nitride ceramic active metal brazing(AMB) copper clad substrates for power semiconductor packaging (Draft for Approval)
Chinese Name:	功率半导体封装用活性金属钎焊(AMB)氮化硅陶瓷覆铜基板 报批稿
Professional Classification:	SJ    Professional Standard - Electronics
Source Content Issued by:	MIIT
Issued on:	2025-09-09
Implemented on:	2026-3-1
Status:	valid
Target Language:	English
File Format:	PDF
Word Count:	5500 words
Translation Price(USD):	165.0
Delivery:	via email in 1 business day

SJ/T 12005-2025 Silicon nitride ceramic active metal brazing (AMB) copper clad substrates for power semiconductor packaging 1 Scope This document specifies requirements, test methods, inspection rules, as well as marking, packaging, transportation and storage of silicon nitride ceramic active metal brazing (AMB) copper clad substrates for power semiconductor packaging. This document is applicable to silicon nitride ceramic active metal brazing (AMB) copper clad substrates for power semiconductor packaging. 2 Normative references The following normative documents contain provisions which, through reference in this text, constitute provisions of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies. GB/T 191 Packaging - Pictorial marking for handling of goods GB/T 2421.1-2008 Environmental testing for electric and electronic products - General and guidance GB/T 2423.22-2012 Environmental testing - Part 2: Tests methods - Test N: Change of temperature GB/T 2828.1-2012 Sampling procedures for inspection by attributes - Part 1: Sampling schemes indexed by acceptance quality limit (AQL) for lot-by-lot inspection GB/T 4722-2017 Test methods for rigid copper clad laminates for printed circuits board GB/T 4677 Test methods of printed boards GB/T 5593-2015 Structure ceramic materials used in electronic component and device GB/T 5594.3 Test methods for properties of structure ceramic used in electronic components and device - Part 3: Test method for mean coefficient of linear expansion GB/T 5594.4 Test methods for properties of structure ceramic used in electronic component and device - Part 4: Test method for permittivity and dielectric loss angle tangent value GB/T 5594.5 Test methods for properties of structure ceramic used in electronic components - Test method for volume resistivity GB/T 5598-2015 Test method for thermal conductivity of beryllium oxide ceramics GB/T 6569-2006 Fine ceramics (advanced ceramics, advanced technical ceramics) - Test method for flexural strength of monolithic ceramics at room temperature GB/T 7354 High-voltage test techniques - Partial discharge measurements GB/T 13841 Surface roughness for electronic ceramic parts GB/T 14594 Oxygen-free copper sheets and strips for vacuum electron devices GB/T 16921 Metallic coatings - Measurement of coating thickness - X-ray spectrometric methods GB/T 23806 Test method for fracture toughness of fine ceramics at room temperature - Single edge precracked beam (SEPB) method GB/T 26572 Requirements of concentration limits for certain restricted substances in electrical and electronic products JB/T 8931-1999 Ultrasonic examination for cladding DL/T 474.4 Guide for insulation test on site - AC voltage withstanding test 3 Terms and definitions For the purposes of this document, the following terms and definitions apply. 3.1 active metal brazing (AMB) process in which active metal elements (such as Ti, Zr, Cr, and Ni, or a combination of them) are added to the brazing material. These elements react with the ceramic surface. Under the high temperature conditions of brazing, the active metal components form an alloy eutectic phase with the ceramic substrate, thereby enabling the combination of ceramics and metals 4 Requirements

Contents Foreword II 1 Scope 2 Normative references 3 Terms and definitions 4 Requirements 5 Inspection methods 6 Inspection rules 7 Marking, packaging, transportation and storage