SJ/T 12032-2025 English Version, SJ/T 12032-2025 Semiconductor devices-Discrete devices- Measuring methods for electrical parameters ofsilicon carbide metal oxide semiconductor field effect transistor (English Version)

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SJ/T 12032-2025 Semiconductor devices-Discrete devices- Measuring methods for electrical parameters ofsilicon carbide metal oxide semiconductor field effect transistor (English Version)
Standard No.:	SJ/T 12032-2025	Status:	to be valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	18500 words	Translation Price(USD):	555.0 remind me the price change Email:
Implemented on:	2026-3-1	Delivery:	via email in 1~5 business day

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Standard No.:	SJ/T 12032-2025
English Name:	Semiconductor devices-Discrete devices- Measuring methods for electrical parameters ofsilicon carbide metal oxide semiconductor field effect transistor
Chinese Name:	半导体器件分立器件碳化硅金属氧化物半导体场效应晶体管电参数测试方法
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	Ministry of Industry and Information Technology
Issued on:	2025-05-12
Implemented on:	2026-3-1
Status:	to be valid
Target Language:	English
File Format:	PDF
Word Count:	18500 words
Translation Price(USD):	555.0
Delivery:	via email in 1~5 business day

Standard

SJ/T 12032-2025 Semiconductor devices-Discrete devices- Measuring methods for electrical parameters ofsilicon carbide metal oxide semiconductor field effect transistor (English Version)
Standard No.	SJ/T 12032-2025
Status	to be valid
Language	English
File Format	PDF
Word Count	18500 words
Price(USD)	555.0
Implemented on	2026-3-1
Delivery	via email in 1~5 business day

Detail of SJ/T 12032-2025

Standard No.

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Chinese Classification

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ICS Classification

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Introduction of SJ/T 12032-2025

本文件描述了碳化硅金属氧化物半导体场效应晶体管的通用测试方法，包括额定值（极限参数）验证、电特性测试与热特性测试。
本文件适用于碳化硅金属氧化物半导体场效应晶体管，其他金属氧化物半导体场效应晶体管也可参照使用。

Contents of SJ/T 12032-2025

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Keywords:
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