SJ/T 12068-2025 English Version, SJ/T 12068-2025 Semiconductor devices-Discrete devices-Reliability test methods for silicon carbon metal-oxide-semiconductorfield effect transistor (English Version)

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SJ/T 12068-2025 Semiconductor devices-Discrete devices-Reliability test methods for silicon carbon metal-oxide-semiconductorfield effect transistor (English Version)
Standard No.:	SJ/T 12068-2025	Status:	to be valid remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	8500 words	Translation Price(USD):	255.0 remind me the price change Email:
Implemented on:	2026-7-1	Delivery:	via email in 1~3 business day

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Standard No.:	SJ/T 12068-2025
English Name:	Semiconductor devices-Discrete devices-Reliability test methods for silicon carbon metal-oxide-semiconductorfield effect transistor
Chinese Name:	半导体器件分立器件碳化硅金属氧化物半导体场效应晶体管可靠性试验方法
Professional Classification:	SJ Professional Standard - Electronics
Source Content Issued by:	CMIIT
Issued on:	2025-07-31
Implemented on:	2026-7-1
Status:	to be valid
Target Language:	English
File Format:	PDF
Word Count:	8500 words
Translation Price(USD):	255.0
Delivery:	via email in 1~3 business day

Standard

SJ/T 12068-2025 Semiconductor devices-Discrete devices-Reliability test methods for silicon carbon metal-oxide-semiconductorfield effect transistor (English Version)
Standard No.	SJ/T 12068-2025
Status	to be valid
Language	English
File Format	PDF
Word Count	8500 words
Price(USD)	255.0
Implemented on	2026-7-1
Delivery	via email in 1~3 business day

Detail of SJ/T 12068-2025

Standard No.

English Name

Chinese Name

Chinese Classification

Professional Classification

ICS Classification

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Issued on

Implemented on

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Superseded on

Abolished on

Superseding

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Keywords

Introduction of SJ/T 12068-2025

本文件描述了碳化硅金属氧化物半导体场效应晶体管可靠性试验方法。
本文件适用于塑封形式碳化硅金属氧化物半导体场效应晶体管，其他金属氧化物半导体场效应晶体管也可参照使用。

Contents of SJ/T 12068-2025

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