Code of China Chinese Classification Professional Classification ICS Classification Latest Value-added Services

Title Standard No. Implemented On
Annealed monocrystalline silicon wafersGB/T 26069-20222022-10-1
Silicon epitaxial wafersGB/T 14139-20192020-5-1
Casting multicrystalline silicon brick for photovoltaic solar cellGB/T 29054-20192020-5-1
Multicrystalline silicon wafers for photovoltaic solar cellGB/T 29055-20192020-5-1
Monocrystalline germanium and monocrystalline germanium slicesGB/T 5238-20192020-5-1
Monocrystalline silicon as cut wafers and lapped wafersGB/T 12965-20182019-6-1
Monocrystalline silicon for solar cellGB/T 25076-20182019-6-1
Monocrystalline silicon polished wafersGB/T 12964-20182019-6-1
Monocrystalline silicon wafers for solar cellsGB/T 26071-20182019-4-1
Granular polysilicon produced by fluidized bed methodGB/T 35307-20172018-7-1
200 mm silicon epitaxial waferGB/T 35310-20172018-7-1
Monocrystalline siliconGB/T 12962-20152017-1-1
Silicon powder―Determination of total carbon content―Infrared absorption method after combustion in an induction furnaceGB/T 32573-20162016-11-1
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometryGB/T 31854-20152016-3-1
Silicon core for polysilicon by improved siemens methodYS/T 1061-20152015-10-1
Electronic-grade polycrystalline siliconGB/T 12963-20142015-9-1
Germanium substrate for solar cellGB/T 30861-20142015-4-1
Test method for measuring compensation degree of silicon materials used for photovoltaic applicationsGB/T 29850-20132014-4-15
Test Method for Measuring Phosphorus, Arsenic and Antimony in Silicon Materials Used for Photovoltaic Applications by Secondary Ion Mass SpectrometryGB/T 29852-20132014-4-15
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometryGB/T 29849-20132014-4-15
Test method for measuring boron and aluminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometryGB/T 29851-20132014-4-15
300 mm polished monocrystalline silicon wafersGB/T 29506-20132014-2-1
300 mm monocrystalline silicon as cut slices and grinded slicesGB/T 29508-20132014-2-1
300 mm monocrystalline siliconGB/T 29504-20132014-2-1
Multi-crystalline silicon wafer for solar cellGB/T 29055-20122013-10-1
Solar-grade casting multi-crystalline silicon brickGB/T 29054-20122013-10-1
Germanium single crystal for solar cellGB/T 26072-20102011-10-1
Solar-grade polycrystalline siliconGB/T 25074-20102011-4-1
Test method for measuring diameter of semiconductor waferGB/T 14140-20092010-6-1
Test method for measuring warp on silicon slices by noncontact scanningGB/T 6620-20092010-6-1
Specification for Polycrystalline SiliconGB/T 12963-20092010-6-1
Test method for bulk acoustic wave attenuation of piezoelectric lithium niobate crystalsYS/T 557-20062006-10-11
Monocrystalline silicon as cut slices and lapped slicesGB/T 12965-20052006-4-1
Monoccrystalline siliconGB/T 12962-20052006-4-1
Monocrystalline silicon polished wafersGB/T 12964-20032004-1-1
Test method for carbon concentration of semi-insulating monocrystal gallium arsenide by measurement infrared absorption methodGB/T 19199-20032004-1-1
Measuring methods for electrical parameters of silicon carbide single crystal materialSJ 20858-20022003-5-1
Monocrystalline silicon as cut slices and lapped slicesGB/T 12965-19961997-4-1
Monocrystalline siliconGB/T 12962-19961997-4-1
Polycrystalline siliconGB/T 12963-19961997-4-1
Monocrystalline silicon polished wafersGB/T 12964-19961997-4-1
Thcikness determination for silicon epitaxial layer and difussion layer - Angle lap-stain methodYS/T 15-19911992-6-1
Technical requirements for silicon metalGB 2881-19911992-6-1
Monocrystalline silicon polished slicesGB 12964-19911992-3-1
Monocrystalline siliconGB 12962-19911992-3-1
Polycrystalline siliconGB 12963-19911992-3-1
Monocrystalline silicon as cut slices and lapped slicesGB 12965-19911992-1-1
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