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Chinese National Standard Category: Semiconductor diode |
English Title: | test method for net carrier density in silicon epitaxial layers by voltage - Capacitance of gated and ungated diodes |
Chinese Title: | 用栅控和非栅控二极管的电压-电容关系测定硅外延层中净载流子浓度的标准方法 |
Standard No.: | GB/T 14863-1993 |
Category No.: | L41 |
Issued by: | AQSIQ |
Issued on: | 1993-1-2 |
Implemented on: | 1994-10-1 |
Status: | superseded |
Superseded by: | GB/T 14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
Superseded on: | 2014-8-15 |
Abolished on: | 2014-08-15 |
Superseding: | |
Word Count: | 5000 words |
Similar Standards: | GB 9528-1988 GB/T 15137-1994 GB/T 15178-1994 GB/T 12562-1990 GB/T 16515-2023 GB/T 21039.1-2007 SJ 20957-2006 GB/T 6589-2002 SJ 50033/151-2002 SJ 50033/153-2002 SJ 50033/150-2002 SJ 50033/161-2002 SJ 50033/152-2002 GB/T 6588-2000 GB/T 4023-1997 GB/T 15177-1994 GB/T 14863-1993 QJ 2362-1992 GB/T 13063-1991 GB/T 13066-1991 |
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