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DB52/T 1104-2016 Junction-to-case thermal resistance transient test method of semiconductor devices
Issued on: 2016-04-01 Price(USD): |
GB 12300-1990 Test methods of safe operating area for power transistors
Issued on: 1990-03-15 Price(USD): 75.0 |
GB 13151-1991 Blank detail specification for reverse blocking triode thyristors, ambient or case-rated, above 100A
Issued on: 1991-08-02 Price(USD): 150.0 |
GB 9432-1988 Blank detail specification for industrial heating tetrode
Issued on: 1988-06-02 Price(USD): 60.0 |
GB/T 11499-2001 Letter symbols for discrete semiconductor devices
Issued on: 1989-03-03 Price(USD): 570.0 |
GB/T 12560-1999 Semiconductor devices --Sectional specification for discrete devices
Issued on: 1999-08-02 Price(USD): 240.0 |
GB/T 12561-1990 Blank detail specification for light emitting diodes
Issued on: 1990-12-06 Price(USD): 160.0 |
GB/T 12562-1990 Blank detail specification for PIN diodes
Issued on: 1990-01-02 Price(USD): 410.0 |
GB/T 12846-1991 General specification for pulse thyratrons
Issued on: 1991-04-28 Price(USD): 340.0 |
GB/T 12847-1991 Blank detail specification for hydrogen thyratrons
Issued on: 1991-04-28 Price(USD): 380.0 |
GB/T 13063-1991 Blank detail specification for current-regulator and current-reference diodes
Issued on: 1991-07-06 Price(USD): 190.0 |
GB/T 13066-1991 Blank detail specification for unijunction transistors
Issued on: 1991-07-06 Price(USD): 190.0 |
GB/T 13150-1991 Blank detail specification for bidirectional triode thyristors, ambient or case-rated, above 100A
Issued on: 1991-08-02 Price(USD): 160.0 |
GB/T 13150-2005 Semiconductor devices discrete devices blank detail specification for bi-directional triode thyristors (triacs), ambient and case-rated, for currents greater than 100A
Issued on: 2005-3-23 Price(USD): 120.0 |
GB/T 13151-2005 Semiconductor devices - Discrete devices - Part 6: thyristors - Section three - Blank detail specification for reverse blocking triode thyristors, ambient and case-rated, for currents
Issued on: 2005-3-23 Price(USD): 180.0 |
GB/T 13152-1991 Blank detail specification for reverse conducting triode thyristors, ambient or case-rated, 5A/5A and above
Issued on: 1991-8-2 Price(USD): 150.0 |
GB/T 13153-1991 Blank detail specification for gate turn-off thyristors, ambient or case-rated, 5A and above
Issued on: 1991-08-02 Price(USD): 160.0 |
GB/T 15137-1994 Blank detail specification for Gunn diodes
Issued on: 1994-06-25 Price(USD): 410.0 |
GB/T 15177-1994 Blank detail specification for mircowave detectors and mixer diodes
Issued on: 1994-08-20 Price(USD): 160.0 |
GB/T 15178-1994 Blank detail specification for variable capacitance diodes
Issued on: 1994-08-20 Price(USD): 410.0 |
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