Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
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Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application $300.00 via email in 1~3 business day valid
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors $220.00 via email in 1~3 business day abolished
GB/T 15529-1995 Blank detail specification for LED numeric displays $150.00 via email in 1~3 business day valid
GB/T 15651.6-2023 Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes $1170.00 via email in 1~5 business day valid
GB/T 26111-2023 Micro-electromechanical system technology—Terms $585.00 via email in 1~5 business day valid
GB/T 32817-2016 Semiconductor devices - Micro-electromechanical devices - Generic specification for MEMS $310.00 via email in 1~5 business day valid
GB/T 41852-2022 Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures $225.00 via email in 1~3 business day valid
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement $315.00 via email in 1~5 business day valid
GB/T 42158-2023 Micro-electromechanical systems technology(MEMS)―Description and measurement methods for micro trench and pyramidal needle structures $375.00 via email in 1~5 business day valid
GB/T 42191-2023 Test methods of the performances for MEMS piezoresistive pressure-sensitive device $255.00 via email in 1~3 business day valid
GB/T 42597-2023 Micro-electromechanical systems technology—Gyroscopes $675.00 via email in 1~5 business day valid
GB/T 43493.1-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects $375.00 via email in 1~3 business day valid
GB/T 43493.2-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection $375.00 via email in 1~3 business day valid
GB/T 43493.3-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence $375.00 via email in 1~3 business day valid
GB/T 44513-2024 Micro-electromechanical systems (MEMS) technology—Environmental test methods of MEMS piezoelectric thin films for sensor application $315.00 via email in 1~5 business day valid
GB/T 44515-2024 Micro-electromechanical systems (MEMS) technology—Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film $315.00 via email in 1~5 business day valid
GB/T 44517-2024 Micro-electromechanical systems (MEMS) technology—Wafer curvature and cantilever beam deflection test methods for determining residual stresses of MEMS films $270.00 via email in 1~3 business day valid
GB/T 44839-2024 Micro-electromechanical systems (MEMS) technology一Micro-pillar compression test for MEMS materials $270.00 via email in 1~3 business day valid
GB/T 44842-2024 Micro-electromechanical systems （MEMS） technology—Bend testing methods of thin film materials $270.00 via email in 1~3 business day valid
GB/T 44849-2024 Micro-electromechanical systems (MEMS) technology—Forming limit measuring method of metallic film materials $375.00 via email in 1~5 business day to be valid
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