2024-11-22 18.219.176.215
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application 300.0 via email in 1~3 business day valid,,1995-8-1
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors 220.0 via email in 1~3 business day abolished2005-10-14,,1995-8-1
GB/T 15529-1995 Blank detail specification for LED numeric displays 150.0 via email in 1~3 business day valid,,1995-1-1
GB/T 15651.6-2023 Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes 1170.0 via email in 1~5 business day valid,,2024-4-1
GB/T 26111-2023 Micro-electromechanical system technology—Terms 585.0 via email in 1~5 business day valid,,2023-9-1
GB/T 32817-2016 Semiconductor devices - Micro-electromechanical devices - Generic specification for MEMS 310.0 via email in 1~5 business day valid,,2017-3-1
GB/T 41852-2022 Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures 225.0 via email in 1~3 business day valid,,2022-10-12
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement 315.0 via email in 1~5 business day valid,,2022-10-12
GB/T 42158-2023 Micro-electromechanical systems technology(MEMS)―Description and measurement methods for micro trench and pyramidal needle structures 375.0 via email in 1~5 business day valid,,2023-7-1
GB/T 42191-2023 Test methods of the performances for MEMS piezoresistive pressure-sensitive device 255.0 via email in 1~3 business day valid,,2023-9-1
GB/T 42597-2023 Micro-electromechanical systems technology—Gyroscopes 675.0 via email in 1~5 business day valid,,2023-9-1
GB/T 43493.1-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects 375.0 via email in 1~3 business day valid,,2024-7-1
GB/T 43493.2-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection 375.0 via email in 1~3 business day valid,,2024-7-1
GB/T 43493.3-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence 375.0 via email in 1~3 business day valid,,2024-7-1
QJ 2493-1993 105.0 via email in 1~3 business day valid,,1991-8-1
QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET) 165.0 via email in 1~3 business day valid,,1994-10-1
SJ/T 11152-1998 Blank detail specification for a.c. powder electro luminescent display devices 100.0 via email in 1~3 business day valid,,1998-5-1
T/SLEIA 0004-2024 via email in business day valid,,2024-2-26
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GB/T 15449-1995 Blank detail-specification for field-effect transistors for case-rated swatching application 
  Issued on: 1995-01-05   Price(USD): 300.0
GB/T 15450-1995 Blank detail specification for silicon dual-qute field-effect transistors 
  Issued on: 1995-01-05   Price(USD): 220.0
GB/T 15529-1995 Blank detail specification for LED numeric displays 
  Issued on: 1995-4-6   Price(USD): 150.0
GB/T 15651.6-2023 Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes 
  Issued on: 2023-9-7   Price(USD): 1170.0
GB/T 26111-2023 Micro-electromechanical system technology—Terms  
  Issued on: 2023-05-23   Price(USD): 585.0
GB/T 32817-2016 Semiconductor devices - Micro-electromechanical devices - Generic specification for MEMS 
  Issued on: 2016-08-29   Price(USD): 310.0
GB/T 41852-2022 Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures 
  Issued on: 2022-10-12   Price(USD): 225.0
GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement 
  Issued on: 2022-10-12   Price(USD): 315.0
GB/T 42158-2023 Micro-electromechanical systems technology(MEMS)―Description and measurement methods for micro trench and pyramidal needle structures 
  Issued on: 2023-03-17   Price(USD): 375.0
GB/T 42191-2023 Test methods of the performances for MEMS piezoresistive pressure-sensitive device  
  Issued on: 2023-05-23   Price(USD): 255.0
GB/T 42597-2023 Micro-electromechanical systems technology—Gyroscopes 
  Issued on: 2023-05-23   Price(USD): 675.0
GB/T 43493.1-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects 
  Issued on: 2023-12-28   Price(USD): 375.0
GB/T 43493.2-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection 
  Issued on: 2023-12-28   Price(USD): 375.0
GB/T 43493.3-2023 Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence 
  Issued on: 2023-12-28   Price(USD): 375.0
QJ 2493-1993  
  Issued on: 1993-03-29   Price(USD): 105.0
QJ 2617-1994 Acceptance Specification for Tube of Microwave Field Effect Transistor (Microwave FET) 
  Issued on: 1994-03-26   Price(USD): 165.0
SJ/T 11152-1998 Blank detail specification for a.c. powder electro luminescent display devices 
  Issued on: 1998-03-11   Price(USD): 100.0
T/SLEIA 0004-2024  
  Issued on: 2024-01-26   Price(USD):
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